Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM
Kishi, Yuwa, Yamada, Akihiro, Ke, Mengnan, Kawahara, Takayuki
Published in IEEE transactions on magnetics (01.05.2022)
Published in IEEE transactions on magnetics (01.05.2022)
Get full text
Journal Article
Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation
Xie, Tianshun, Ke, Mengnan, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki
Published in Japanese Journal of Applied Physics (29.02.2024)
Published in Japanese Journal of Applied Physics (29.02.2024)
Get full text
Journal Article
Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process
Ke, Mengnan, Takenaka, Mitsuru, Takagi, Shinichi
Published in IEEE transactions on electron devices (01.12.2019)
Published in IEEE transactions on electron devices (01.12.2019)
Get full text
Journal Article
Enhanced contact properties of MoTe2-FET via laser-induced heavy doping
Xie, Tianshun, Fukuda, Kazuki, Ke, Mengnan, Krüger, Peter, Ueno, Keiji, Kim, Gil-Ho, Aoki, Nobuyuki
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article
(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks
Takagi, Shinichi, Ke, Mengnan, Chang, Chih-Yu, Yokoyama, Chiaki, Yokoyama, Masafumi, Gotow, Takahiro, Nishi, Koichi, Yoon, Sanghee, Takenaka, Mitsuru
Published in ECS transactions (16.08.2017)
Published in ECS transactions (16.08.2017)
Get full text
Journal Article
(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices
Takagi, Shinichi, Chang, Chih-Yu, Yokoyama, Masafumi, Nishi, Koichi, Zhang, Rui, Ke, Mengnan, Han, Jae-Hoon, Takenaka, Mitsuru
Published in ECS transactions (08.09.2015)
Published in ECS transactions (08.09.2015)
Get full text
Journal Article
Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process
Mengnan Ke, Takenaka, Mitsuru, Takagi, Shinichi
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
Get full text
Journal Article
Realization of MoTe 2 CMOS inverter by contact doping and channel encapsulation
Xie, Tianshun, Ke, Mengnan, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki
Published in Japanese Journal of Applied Physics (29.02.2024)
Published in Japanese Journal of Applied Physics (29.02.2024)
Get full text
Journal Article
Contact Properties on a Semiconducting MoTe 2 Crystal Using Polymorphic Structures
Xie, Tianshun, Ke, Mengnan, Krüger, Peter, Ueno, Keiji, Aoki, Nobuyuki
Published in ACS applied electronic materials (10.09.2024)
Published in ACS applied electronic materials (10.09.2024)
Get full text
Journal Article
Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al 2 O 3 /plasma oxidation GeO x /(111) and (100) n-Ge MOS structures
Han, Xueyang, Chen, Chia-Tsong, Ke, Mengnan, Zhao, Ziqiang, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article
Enhanced contact properties of MoTe 2 -FET via laser-induced heavy doping
Xie, Tianshun, Fukuda, Kazuki, Ke, Mengnan, Krüger, Peter, Ueno, Keiji, Kim, Gil-Ho, Aoki, Nobuyuki
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article
Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures
Han, Xueyang, Chen, Chia-Tsong, Ke, Mengnan, Zhao, Ziqiang, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article
Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures
Han, Xueyang, Chia-Tsong Chen, Mengnan Ke, Zhao, Ziqiang, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article