Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration
Yamaguchi, Harunaka, Nagira, Takashi, Kawazu, Zempei, Ono, Kenichi, Takemi, Masayoshi
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
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Conference Proceeding
Identification of Na acceptor in MOCVD-grown ZnS films and the effect of UV light illumination
Taguchi, Tsunemasa, Kawazu, Zempei, Ohno, Tetsuichiro, Sawada, Akihiro
Published in Journal of crystal growth (01.04.1990)
Published in Journal of crystal growth (01.04.1990)
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Journal Article
Conference Proceeding
SINGLE-CRYSTAL 4H-SIC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
HAMANO KENICHI, OHNO AKIHITO, TANAKA TAKANORI, KAWAZU ZEMPEI, TOMITA NOBUYUKI, MITANI YOICHIRO
Year of Publication 07.10.2014
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Year of Publication 07.10.2014
Patent
SIC EPITAXIAL WAFER PRODUCTION METHOD
OCHI, JUNJI, TOMITA, NOBUYUKI, TANAKA, TAKANORI, TOYODA, YOSHIHIKO, KAWABATA, NAOYUKI, KAWAZU, ZEMPEI, HAMANO, KENICHI, KUROIWA, TAKEHARU, ONO, AKIHITO, MITANI, YOICHIRO
Year of Publication 21.08.2014
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Year of Publication 21.08.2014
Patent
SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME
NISHIGUCHI HARUMI, YAGI TETSUYA, KAWAZU ZEMPEI, TASHIRO YOSHIHISA, SHIMA AKIHIRO
Year of Publication 21.06.2002
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Year of Publication 21.06.2002
Patent
Selective area growth of GaN/AlN heterostructures
Marx, Diethard, Kawazu, Zempei, Nakayama, Takeshi, Mihashi, Yutaka, Takami, Tetsuya, Nunoshita, Masahiro, Ozeki, Tatsuo
Published in Journal of crystal growth (15.06.1998)
Published in Journal of crystal growth (15.06.1998)
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Journal Article
Single-crystal 4H-SiC substrate
Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Year of Publication 27.02.2018
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Year of Publication 27.02.2018
Patent
Method for manufacturing a single-crystal 4H-SiC substrate
Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Year of Publication 05.09.2017
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Year of Publication 05.09.2017
Patent
Method for manufacturing SiC epitaxial wafer
Tomita, Nobuyuki, Tanaka, Takanori, Kawabata, Naoyuki, Hamano, Kenichi, Kawazu, Zempei, Ono, Akihito, Toyoda, Yoshihiko, Mitani, Yoichiro, Kuroiwa, Takeharu, Ochi, Junji
Year of Publication 05.06.2018
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Year of Publication 05.06.2018
Patent
Verfahren zum Herstellen eines SIC-Epitaxialwafers
Tomita, Nobuyuki, Tanaka, Takanori, Kawabata, Naoyuki, Hamano, Kenichi, Kawazu, Zempei, Ono, Akihito, Toyoda, Yoshihiko, Mitani, Yoichiro, Kuroiwa, Takeharu, Ochi, Junji
Year of Publication 19.01.2023
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Year of Publication 19.01.2023
Patent
SINGLE-CRYSTAL 4H-SiC SUBSTRATE
Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Year of Publication 13.10.2016
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Year of Publication 13.10.2016
Patent
METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE
Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Year of Publication 13.10.2016
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Year of Publication 13.10.2016
Patent
Single-crystal 4H-SiC substrate
Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Year of Publication 23.08.2016
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Year of Publication 23.08.2016
Patent