Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface
Oshima, Takayoshi, Kato, Yuji, Kawano, Naoto, Kuramata, Akito, Yamakoshi, Shigenobu, Fujita, Shizuo, Oishi, Toshiyuki, Kasu, Makoto
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
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Journal Article
Formation of indium-tin oxide ohmic contacts for β-Ga2O3
Oshima, Takayoshi, Wakabayashi, Ryo, Hattori, Mai, Hashiguchi, Akihiro, Kawano, Naoto, Sasaki, Kohei, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu, Yoshimatsu, Kohei, Ohtomo, Akira, Oishi, Toshiyuki, Kasu, Makoto
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
Carrier confinement observed at modulation-doped β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 heterojunction interface
Oshima, Takayoshi, Kato, Yuji, Kawano, Naoto, Kuramata, Akito, Yamakoshi, Shigenobu, Fujita, Shizuo, Oishi, Toshiyuki, Kasu, Makoto
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
Get full text
Journal Article
Formation of indium–tin oxide ohmic contacts for β-Ga 2 O 3
Oshima, Takayoshi, Wakabayashi, Ryo, Hattori, Mai, Hashiguchi, Akihiro, Kawano, Naoto, Sasaki, Kohei, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu, Yoshimatsu, Kohei, Ohtomo, Akira, Oishi, Toshiyuki, Kasu, Makoto
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
Demonstration of RF-DC conversion using dual diode rectifier circuit for rectenna with diamond Schottky barrier diodes
Oishi, Toshiyuki, Kawano, Naoto, Kasu, Makoto
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
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Conference Proceeding