Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition
Tsukihara, M., Sumiyoshi, K., Okimoto, T., Kataoka, K., Kawamichi, S., Nishino, K., Naoi, Y., Sakai, S.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Journal Article
Conference Proceeding
AlGaN films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD
Sumiyoshi, K., Tsukihara, M., Kawamichi, S., Yan, F., Sakai, S.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
Diffusion effect-induced InNAs films growth on GaAs (1 0 0) substrates by MOCVD
Yan, F.W., Naoi, Y., Tsukihara, M., Kawamichi, S., Yadani, T., Sumiyoshi, K., Sakai, S.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Journal Article
Diffusion effect-induced InNAs films growth on GaAs (100) substrates by MOCVD
YAN, F. W, NAOI, Y, TSUKIHARA, M, KAWAMICHI, S, YADANI, T, SUMIYOSHI, K, SAKAI, S
Published in Physica. B, Condensed matter (2006)
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Published in Physica. B, Condensed matter (2006)
Conference Proceeding