Highly-reliable TaOx reram technology using automatic forming circuit
Kawai, Ken, Kawahara, Akifumi, Yasuhara, Ryutaro, Muraoka, Shunsaku, Wei, Zhiqiang, Azuma, Ryotaro, Tanabe, Kouhei, Shimakawa, Kazuhiko
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
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Conference Proceeding
An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput
Kawahara, A., Azuma, R., Ikeda, Y., Kawai, K., Katoh, Y., Hayakawa, Y., Tsuji, K., Yoneda, S., Himeno, A., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
Published in IEEE journal of solid-state circuits (01.01.2013)
Published in IEEE journal of solid-state circuits (01.01.2013)
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Journal Article
Conference Proceeding
An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput
Kawahara, A., Azuma, R., Ikeda, Y., Kawai, K., Katoh, Y., Tanabe, K., Nakamura, T., Sumimoto, Y., Yamada, N., Nakai, N., Sakamoto, S., Hayakawa, Y., Tsuji, K., Yoneda, S., Himeno, A., Origasa, K., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
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Conference Proceeding
CROSS-POINT-TYPE NON-VOLATILE STORAGE DEVICE AND DRIVE METHOD THEREFOR
SHIMAKAWA, KAZUHIKO, AZUMA, RYOTARO, KATOH, YOSHIKAZU, KAWAHARA, AKIFUMI
Year of Publication 03.10.2013
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Year of Publication 03.10.2013
Patent
RESISTANCE CHANGE TYPE NONVOLATILE STORAGE DEVICE AND METHOD OF WRITING THE SAME
SHIMAKAWA, KAZUHIKO, AZUMA, RYOTARO, TANABE, KOUHEI, KAWAHARA, AKIFUMI
Year of Publication 06.06.2013
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Year of Publication 06.06.2013
Patent
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM
Kawahara, A., Kawai, K., Ikeda, Y., Katoh, Y., Azuma, R., Yoshimoto, Y., Tanabe, K., Zhiqiang Wei, Ninomiya, T., Katayama, K., Yasuhara, R., Muraoka, S., Himeno, A., Yoshikawa, N., Murase, H., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01.02.2013)
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01.02.2013)
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Conference Proceeding
Effects of PAsxNy deposition conditions and the Cd concentration in the substrates on the characteristics of In0.53Ga0.47As metal-insulator-semiconductor field effect transistors
IWASE, Y, KAWAHARA, A, ARAI, F, SUGANO, T
Published in Japanese journal of applied physics (01.12.1988)
Published in Japanese journal of applied physics (01.12.1988)
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Journal Article