Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power
KELEMEN, M. T, WEBER, J, KAUFEL, G, BIHLMANN, G, MORITZ, R, MIKULLA, M, WEIMANN, G
Published in Electronics letters (01.09.2005)
Published in Electronics letters (01.09.2005)
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14xx-nm high brightness tapered diode lasers grown by solid-source MBE
Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., Weimann, G.
Published in IEEE photonics technology letters (01.03.2006)
Published in IEEE photonics technology letters (01.03.2006)
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Short-Pulse High-Power Operation of GaSb-Based Diode Lasers
Muller, M., Rattunde, M., Kaufel, G., Schmitz, J., Wagner, J.
Published in IEEE photonics technology letters (01.12.2009)
Published in IEEE photonics technology letters (01.12.2009)
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Journal Article
High-power 1.9-μm diode laser arrays with reduced far-field angle
Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.
Published in IEEE photonics technology letters (15.02.2006)
Published in IEEE photonics technology letters (15.02.2006)
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Journal Article
GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power
C. Pfahler, C. Pfahler, G. Kaufel, G. Kaufel, M.T. Kelemen, M.T. Kelemen, M. Mikulla, M. Mikulla, M. Rattunde, M. Rattunde, J. Schmitz, J. Schmitz, J. Wagner, J. Wagner
Published in IEEE photonics technology letters (15.03.2006)
Published in IEEE photonics technology letters (15.03.2006)
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Journal Article
Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 \mu m
Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Wagner, J., Blasi, B., Kallweit, D., Zappe, H.
Published in IEEE journal of quantum electronics (01.11.2008)
Published in IEEE journal of quantum electronics (01.11.2008)
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Journal Article
GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power
Pfahler, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Rattunde, M., Schmitz, J., Wagner, J.
Published in IEEE photonics technology letters (15.03.2006)
Published in IEEE photonics technology letters (15.03.2006)
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Journal Article
Continuous-wave operation of GaInAs-AlGaAsSb quantum cascade lasers
Yang, Q., Bronner, W., Manz, C., Moritz, R., Mann, Ch, Kaufel, G., Kohler, K., Wagner, J.
Published in IEEE photonics technology letters (01.11.2005)
Published in IEEE photonics technology letters (01.11.2005)
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Journal Article
Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength
Lang, M., Bronner, W., Benz, W., Ludwig, M., Hurm, V., Kaufel, G., Leuther, A., Rosenzweig, J., Schlechtweg, M.
Published in Electronics letters (27.09.2001)
Published in Electronics letters (27.09.2001)
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Journal Article
Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Zhihao Lao, Hurm, V., Thiede, A., Berroth, M., Ludwig, M., Lienhart, H., Schlechtweg, M., Hornung, J., Bronner, W., Kohler, K., Hulsmann, A., Kaufel, G., Jakobus, T.
Published in Journal of lightwave technology (01.08.1998)
Published in Journal of lightwave technology (01.08.1998)
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Journal Article
E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
HÜLSMANN, A, KAUFEL, G, KÖHLER, K, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T
Published in Japanese Journal of Applied Physics (01.10.1990)
Published in Japanese Journal of Applied Physics (01.10.1990)
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Journal Article
Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A., Zhi-Gong, Schlechtweg, M., Lang, M., Leber, P., Zhihao Lao, Nowotny, U., Hurm, V., Rieger-Motzer, M., Ludwig, M., Sedler, M., Kohler, K., Bronner, W., Hornung, J., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.
Published in IEEE transactions on very large scale integration (VLSI) systems (01.03.1998)
Published in IEEE transactions on very large scale integration (VLSI) systems (01.03.1998)
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Hemt circuits for signal/data processing
Berroth, M., Hurm, V., Lang, M., Lao, Z., Thiede, A., Wang, Z.-G., Bangert, A., Bronner, W., Hülsmann, A., Kaufel, G., Köhler, K., Raynor, B., Jakobus, T.
Published in Solid-state electronics (01.10.1997)
Published in Solid-state electronics (01.10.1997)
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Journal Article
Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Zappe, H., Wagner, J.
Published in IEEE photonics technology letters (01.09.2006)
Published in IEEE photonics technology letters (01.09.2006)
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Raman spectroscopic assessment of laterally structured δ-doped GaAs: Si
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Conference Proceeding
10 GB/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs
Wennekers, P., Novotny, U., Huelsmann, A., Kaufel, G., Koehler, K., Raynor, B., Schneider, J.
Published in IEEE journal of solid-state circuits (01.10.1992)
Published in IEEE journal of solid-state circuits (01.10.1992)
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Journal Article
Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2
Falcigno, P., Münzel, N., Holzwarth, H., Schacht, H.-T., Mertesdorf, C., Bronner, W., Kaufel, G., Timko, A., Nalamasu, O.
Published in Microelectronic engineering (01.01.1996)
Published in Microelectronic engineering (01.01.1996)
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Conference Proceeding
Fabrication and performance of 1-dim MODFETs
Hülsmann, A., Roman, P., Braunstein, J., Kaufel, G., Köhler, K., Jakobus, T.
Published in Microelectronic engineering (01.04.1993)
Published in Microelectronic engineering (01.04.1993)
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Journal Article
GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence
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Conference Proceeding
Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 [Formula Omitted]m
Geerlings, E, Rattunde, M, Schmitz, J, Kaufel, G, Wagner, J, Blasi, B, Kallweit, D, Zappe, H
Published in IEEE journal of quantum electronics (01.11.2008)
Published in IEEE journal of quantum electronics (01.11.2008)
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Journal Article