NBTI model development with regression analysis
Katsetos, Anastasios A., Brendler, Andrew C.
Published in Microelectronics and reliability (01.12.2009)
Published in Microelectronics and reliability (01.12.2009)
Get full text
Journal Article
Mechanism of Threshold Voltage Shift (Δ V th ) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
Liu, Chuan-Hsi, Lee, Ming T., Lin, Chih-Yung, Chen, Jenkon, Loh, Y. T., Liou, Fu-Tai, Schruefer, Klaus, Katsetos, Anastasios A., Yang, Zhijian, Rovedo, Nivo, Hook, Terence B., Wann, Clement, Chen, Tze-Chiang
Published in Japanese Journal of Applied Physics (2002)
Published in Japanese Journal of Applied Physics (2002)
Get full text
Journal Article
Methods and systems involving measuring complex dimensions of silicon devices
ARCHIE CHARLES N, VAKAS GEORGIOS A, SOLECKY ERIC P, KATSETOS ANASTASIOS A
Year of Publication 07.10.2014
Get full text
Year of Publication 07.10.2014
Patent
Methods and Systems Involving Measuring Complex Dimensions of Silicon Devices
ARCHIE CHARLES N, VAKAS GEORGIOS A, SOLECKY ERIC P, KATSETOS ANASTASIOS A
Year of Publication 03.05.2012
Get full text
Year of Publication 03.05.2012
Patent
Method and circuit for element wearout recovery
LUKAITIS JOSEPH M, BOFFOLI STEPHEN P, GUARIN FERNANDO J, LAWHORN B. B. (BOB), WANG PINGUAN, RAUCH, III STEWART E, LA ROSA GIUSEPPE, KATSETOS ANASTASIOS A
Year of Publication 25.10.2005
Get full text
Year of Publication 25.10.2005
Patent
Method and circuit for element wearout recovery
La Rosa, Giuseppe, Lukaitis, Joseph M, Katsetos, Anastasios A, Rauch, III, Stewart E, Wang, Ping-Chuan, Boffoli, Stephen P, Guarin, Fernando J, Lawhorn, B. B. (Bob)
Year of Publication 25.10.2005
Get full text
Year of Publication 25.10.2005
Patent
Method and circuit for element wearout recovery
LUKAITIS JOSEPH M, BOFFOLI STEPHEN P, GUARIN FERNANDO J, LAWHORN B. B., ROSA GIUSEPPE L, WANG PINGUAN, RAUCH STEWART E.III, KATSETOS ANASTASIOS A
Year of Publication 02.06.2005
Get full text
Year of Publication 02.06.2005
Patent