Low noise photosensitive device structures based on porous silicon
Balagurov, L.A, Bayliss, S.C, Yarkin, D.G, Andrushin, S.Ya, Kasatochkin, V.S, Orlov, A.F, Petrova, E.A
Published in Solid-state electronics (2003)
Published in Solid-state electronics (2003)
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Journal Article
Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S
Published in Solid-state electronics (01.12.2002)
Published in Solid-state electronics (01.12.2002)
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Journal Article
Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, Andrei E, Nelson, Nicole N, Fahmi, M.M.E, Griffin, James A, Khan, Arif, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S
Published in Solid-state electronics (01.12.2002)
Published in Solid-state electronics (01.12.2002)
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Journal Article