Search Results - "Karg, Siegfried F" :: K.UTB vyhledávací portál

Fully Depleted Nanowire Field-Effect Transistor in Inversion Mode

by Hayden, Oliver, Björk, Mikael T., Schmid, Heinz, Riel, Heike, Drechsler, Ute, Karg, Siegfried F., Lörtscher, Emanuel, Riess, Walter
Published in Small (Weinheim an der Bergstrasse, Germany) (05.02.2007)

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How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase

by Todri-Sanial, Aida, Carapezzi, Stefania, Delacour, Corentin, Abernot, Madeleine, Gil, Thierry, Corti, Elisabetta, Karg, Siegfried F., Nunez, Juan, Jimenez, Manuel, Avedillo, Maria J., Linares-Barranco, Bernabe
Published in IEEE transaction on neural networks and learning systems (01.05.2022)

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MEMORY CELL, AND MEMORY DEVICE

by MEIJER INGMAR, KARG SIEGFRIED F
Year of Publication 17.09.2010

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Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory

by Janousch, M., Meijer, G. I., Staub, U., Delley, B., Karg, S. F., Andreasson, B. P.
Published in Advanced materials (Weinheim) (03.09.2007)

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MELT-BASED PATTERNING FOR ELECTRONIC DEVICE, INCLUDING STEPS OF HEATING AND APPLYING PRESSURE TO DEPOSITION MATERIAL AND DEPOSITING MOLTEN DEPOSITION MATERIAL TO SURFACE OF ELECTRONIC DEVICE

by RIESS, WALTER H, KARG, SIEGFRIED F, RIEL, HEIKE E
Year of Publication 10.12.2004

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Transition-metal-oxide-based resistance-change memories

by Karg, S. F., Meijer, G. I., Bednorz, J. G., Rettner, C. T., Schrott, A. G., Joseph, E. A., Lam, C. H., Janousch, M., Staub, U., La Mattina, F., Alvarado, S. F., Widmer, D., Stutz, R., Drechsler, U., Caimi, D.
Published in IBM journal of research and development (01.07.2008)

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