Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney, J, Tesh, O, Singh, M, Roberts, J W, Jarman, J C, Lee, L C, Huq, T N, Brister, J, Karboyan, S, Kuball, M, Chalker, P R, Oliver, R A, Massabuau, F C-P
Published in Journal of physics. D, Applied physics (20.11.2019)
Published in Journal of physics. D, Applied physics (20.11.2019)
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Journal Article
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Conference Proceeding
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Moens, P., Banerjee, A., Uren, M. J., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Casar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M., Tack, M.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Atomic layer deposited α -Ga 2 O 3 solar-blind photodetectors
Moloney, J, Tesh, O, Singh, M, Roberts, J W, Jarman, J C, Lee, L C, Huq, T N, Brister, J, Karboyan, S, Kuball, M, Chalker, P R, Oliver, R A, Massabuau, F C-P
Published in Journal of physics. D, Applied physics (20.11.2019)
Published in Journal of physics. D, Applied physics (20.11.2019)
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Journal Article
Negative dynamic Ron in AlGaN/GaN power devices
Moens, P., Uren, M. J., Banerjee, A., Meneghini, M., Padmanabhan, B., Jeon, W., Karboyan, S., Kuball, M., Meneghesso, G., Zanoni, E., Tack, M.
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective
Moens, Peter, Banerjee, Abhishek, Constant, Aurore, Coppens, Peter, Caesar, Markus, Li, Zilan, Vandeweghe, Steven, Declercq, Frederick, Padmanabhan, Balaji, Jeon, Woochul, Guo, Jia, Salih, Ali, Tack, Marnix, Meneghini, Matteo, Dalcanale, Stefano, Tajilli, A, Meneghesso, Gaudenzio, Zanoni, Enrico, Uren, Mike, Chatterjee, Indranil, Karboyan, Serge, Kuball, Martin
Published in ECS transactions (04.05.2016)
Published in ECS transactions (04.05.2016)
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Journal Article
Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs
Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, D. J., Guiney, I., Humphreys, C. J.
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
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Conference Proceeding
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article
Analysis and path localization of gate current in AlGaN/GaN HEMTs using low frequency noise measurements and Optical Beam Induced Resistance Change technique
Karboyan, S., Tartarin, J. G., Carisetti, D., Lambert, B.
Published in 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) (01.06.2013)
Published in 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) (01.06.2013)
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Conference Proceeding
Evidence of relationship between mechanical stress and leakage current in AIGaN/GaN transistor after storage test
LAMBERT, B, LABAT, N, MERMOUX, M, CARISETTI, D, KARBOYAN, S, TARTARIN, J. G, THORPE, J, BRUNEL, L, CURUTCHET, A, MALBERT, N, LATU-ROMAIN, E
Published in Microelectronics and reliability (2012)
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Published in Microelectronics and reliability (2012)
Conference Proceeding
Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by I-V-T measurements
Karboyan, S., Tartarin, J. G., Lambert, B.
Published in 2013 European Microwave Integrated Circuit Conference (01.10.2013)
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Published in 2013 European Microwave Integrated Circuit Conference (01.10.2013)
Conference Proceeding
Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: Impact of HTRB stress on short term and long term memory effects
Tartarin, J. G., Astre, G., Karboyan, S., Noutsa, T., Lambert, B.
Published in 2013 IEEE International Wireless Symposium (IWS) (01.04.2013)
Published in 2013 IEEE International Wireless Symposium (IWS) (01.04.2013)
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Conference Proceeding
Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements
Tartarin, J. G., Karboyan, S., Carisetti, D., Lambert, B.
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
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Conference Proceeding
I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies
Tartarin, J. G., Karboyan, S., Olivie, F., Astre, G., Bary, L., Lambert, B.
Published in 2011 6th European Microwave Integrated Circuit Conference (01.10.2011)
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Published in 2011 6th European Microwave Integrated Circuit Conference (01.10.2011)
Conference Proceeding