Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)
Karandashev, S. A., Matveev, B. A., Remennyi, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2019)
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Journal Article
Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes
Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A
Published in Semiconductor science and technology (01.01.2019)
Published in Semiconductor science and technology (01.01.2019)
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Journal Article
On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions
Karandashev, S. A., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.
Published in Optics and spectroscopy (2023)
Published in Optics and spectroscopy (2023)
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Journal Article
On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)
Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2023)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2023)
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Journal Article
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes
Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A
Published in Semiconductor science and technology (01.06.2018)
Published in Semiconductor science and technology (01.06.2018)
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Journal Article
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A.
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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Journal Article
InAs and InAsSb LEDs with built-in cavities
Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.04.2003)
Published in Semiconductor science and technology (01.04.2003)
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Journal Article
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes and LEDs
Dyakonova, N., Karandashev, S. A., Levinshtein, M. E., Matveev, B. A., Remennyi, M. A.
Published in 2023 International Conference on Noise and Fluctuations (ICNF) (17.10.2023)
Published in 2023 International Conference on Noise and Fluctuations (ICNF) (17.10.2023)
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Conference Proceeding
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2014)
Published in Infrared physics & technology (01.05.2014)
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Journal Article
Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs
Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.
Published in Infrared physics & technology (01.09.2021)
Published in Infrared physics & technology (01.09.2021)
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Journal Article
Current induced cooling in a metal/ n -InAs structure
Il'inskaya, N. D., Karandashev, S. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Chernyakov, A. E.
Published in RSC Applied Interfaces (10.09.2024)
Published in RSC Applied Interfaces (10.09.2024)
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Journal Article
Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias
Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.
Published in Infrared physics & technology (01.12.2020)
Published in Infrared physics & technology (01.12.2020)
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Journal Article
P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Journal Article