Dielectric response of wurtzite gallium nitride in the terahertz frequency range
Hibberd, M.T., Frey, V., Spencer, B.F., Mitchell, P.W., Dawson, P., Kappers, M.J., Oliver, R.A., Humphreys, C.J., Graham, D.M.
Published in Solid state communications (01.12.2016)
Published in Solid state communications (01.12.2016)
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Journal Article
Critical thickness calculations for InGaN/GaN
Holec, D., Costa, P.M.F.J., Kappers, M.J., Humphreys, C.J.
Published in Journal of crystal growth (01.05.2007)
Published in Journal of crystal growth (01.05.2007)
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Journal Article
Conference Proceeding
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Humphreys, C.J., Griffiths, J.T., Tang, F., Oehler, F., Findlay, S.D., Zheng, C., Etheridge, J., Martin, T.L., Bagot, P.A.J., Moody, M.P., Sutherland, D., Dawson, P., Schulz, S., Zhang, S., Fu, W.Y., Zhu, T., Kappers, M.J., Oliver, R.A.
Published in Ultramicroscopy (01.05.2017)
Published in Ultramicroscopy (01.05.2017)
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Journal Article
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler, F., Zhu, T., Rhode, S., Kappers, M.J., Humphreys, C.J., Oliver, R.A.
Published in Journal of crystal growth (15.11.2013)
Published in Journal of crystal growth (15.11.2013)
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Journal Article
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers
KAPPERS, M. J, DATTA, R, OLIVER, R. A, RAYMENT, F. D. G, VICKERS, M. E, HUMPHREYS, C. J
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Conference Proceeding
Journal Article
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
Johnston, C.F., Kappers, M.J., Moram, M.A., Hollander, J.L., Humphreys, C.J.
Published in Journal of crystal growth (01.06.2009)
Published in Journal of crystal growth (01.06.2009)
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Journal Article
The dissociation of the [a + c] dislocation in GaN
Hirsch, P.B., Lozano, J.G., Rhode, S., Horton, M.K., Moram, M.A., Zhang, S., Kappers, M.J., Humphreys, C.J., Yasuhara, A., Okunishi, E., Nellist, P.D.
Published in Philosophical magazine (Abingdon, England) (30.09.2013)
Published in Philosophical magazine (Abingdon, England) (30.09.2013)
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Journal Article
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
Bennett, S.E., Ulfig, R.M., Clifton, P.H., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Oliver, R.A.
Published in Ultramicroscopy (01.02.2011)
Published in Ultramicroscopy (01.02.2011)
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Journal Article
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.
Published in Journal of crystal growth (01.06.2009)
Published in Journal of crystal growth (01.06.2009)
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Journal Article
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
Hao, Rui, Kappers, M.J., Moram, M.A., Humphreys, C.J.
Published in Journal of crystal growth (15.12.2011)
Published in Journal of crystal growth (15.12.2011)
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Journal Article
Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.
Published in Journal of crystal growth (15.10.2007)
Published in Journal of crystal growth (15.10.2007)
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Journal Article
Growth of low dislocation density GaN using transition metal nitride masking layers
Moram, M.A., Kappers, M.J., Barber, Z.H., Humphreys, C.J.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
Oliver, R.A., Jarjour, A.F., Taylor, R.A., Tahraoui, A., Zhang, Y., Kappers, M.J., Humphreys, C.J.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2008)
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Journal Article
The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies
Moram, M.A., Gabbai, U.E., Sadler, T.C., Kappers, M.J., Oliver, R.A.
Published in Journal of electronic materials (01.06.2010)
Published in Journal of electronic materials (01.06.2010)
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Journal Article
Conference Proceeding
Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN
McAleese, C., Kappers, M.J., Rayment, F.D.G., Cherns, P., Humphreys, C.J.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN
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Journal Article
Conference Proceeding
Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures
Zhu, D., Kappers, M.J., McAleese, C., Graham, D.M., Chabrol, G.R., Hylton, N.P., Dawson, P., Thrush, E.J., Humphreys, C.J.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
Loeto, K., Kusch, G., Ghosh, S., Kappers, M.J., Oliver, R.A.
Published in Micron (Oxford, England : 1993) (01.09.2023)
Published in Micron (Oxford, England : 1993) (01.09.2023)
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Journal Article
MOVPE studies of zincblende GaN on 3C-SiC/Si(001)
Wade, T.J., Gundimeda, A., Kappers, M.J., Frentrup, M., Fairclough, S.M., Wallis, D.J., Oliver, R.A.
Published in Journal of crystal growth (01.06.2023)
Published in Journal of crystal growth (01.06.2023)
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Journal Article