PRECURSORS FOR PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
SALY MARK J, ODEDRA RAJESH, KANJOLIA RAVI, MOSER DANIEL, LAVOIE ADRIEN
Year of Publication 11.11.2019
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Year of Publication 11.11.2019
Patent
300mm Wafer-scale ALD-grown MoS2 for Cu diffusion barrier
Ngo, Thong, Zacatzi, Angelica, Tan, Yuanqiu, Lee, Daniel, Waknis, Anand, Vu, Nguyen, Kanjolia, Ravi, Moinpour, Mansour, Chen, Zhihong
Published in Proceedings of the IEEE International Interconnect Technology Conference (03.06.2024)
Published in Proceedings of the IEEE International Interconnect Technology Conference (03.06.2024)
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Conference Proceeding
PRECURSORS FOR PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
SALY MARK J, ODEDRA RAJESH, KANJOLIA RAVI, MOSER DANIEL, LAVOIE ADRIEN
Year of Publication 22.08.2013
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Year of Publication 22.08.2013
Patent
Design and Development of ALD Precursors for Microelectronics
Kanjolia, Ravi K., Anthis, J., Odedra, R., Williams, P., Heys, P. N.
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
Deguns, Eric, Sowa, Mark J., Dalberth, Mark J., Bhatia, Ritwik, Kanjolia, Ravi, Moser, Dan, Sundaram, Ganesh M., Becker, Jill S.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article