A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact
Fujishima, N., Sugi, A., Suzuki, T., Kanjiwara, S., Matsubara, K., Nagayasu, Y., Salama, C.A.T.
Published in Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) (2001)
Published in Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) (2001)
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