SRAM stability design comprehending 14nm FinFET reliability
Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance
Minjung Jin, Changze Liu, Jinju Kim, Jungin Kim, Hyewon Shim, Kangjung Kim, Gunrae Kim, Soonyoung Lee, Uemura, Taiki, Man Chang, Taehyun An, Junekyun Park, Sangwoo Pae
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo
Published in Microelectronics and reliability (01.02.2018)
Published in Microelectronics and reliability (01.02.2018)
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Journal Article
Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo
Published in Microelectronics and reliability (01.02.2018)
Published in Microelectronics and reliability (01.02.2018)
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Journal Article
Experimental study on BTI variation impacts in SRAM based on high-k/metal gate FinFET: From transistor level Vth mismatch, cell level SNM to product level Vmin
Liu, Changze, Nam, Hyeonwoo, Kim, Kangjung, Choo, Seungjin, Kim, Hyejin, Kim, Hyunjin, Kim, Yoohwan, Lee, Soonyoung, Yoon, Sungyoung, Kim, Jungin, Kim, Jin Ju, Hwang, Lira, Ha, Sungmock, Jin, Min-Jung, Sagong, Hyun Chul, Park, June-Kyun, Pae, Sangwoo, Park, Jongwoo
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article