Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots
Das, A., Sinha, P., Kotsar, Y., Kandaswamy, P.K., Dimitrakopulos, G.P., Kehagias, Th, Komninou, Ph, Nataf, G., De Mierry, P., Monroy, E.
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Conference Proceeding
Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study
Lenka, H., Meersschaut, J., Kandaswamy, P.K., Modarresi, H., Bender, H., Vantomme, A., Vandervorst, W.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.07.2014)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.07.2014)
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Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption
Kotsar, Y., Kandaswamy, P.K., Das, A., Sarigiannidou, E., Bellet-Amalric, E., Monroy, E.
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Journal Article
Conference Proceeding
Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics
Kandaswamy, P.K., Machhadani, H., Bellet-Amalric, E., Nevou, L., Tchernycheva, M., Lahourcade, L., Julien, F.H., Monroy, E.
Published in Microelectronics (01.02.2009)
Published in Microelectronics (01.02.2009)
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PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire
Lahourcade, L., Renard, J., Kandaswamy, P.K., Gayral, B., Chauvat, M.P., Ruterana, P., Monroy, E.
Published in Microelectronics (01.02.2009)
Published in Microelectronics (01.02.2009)
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