MBE growth and properties of GaCrN
Hashimoto, M., Zhou, Y.K., Kanamura, M., Katayama-Yoshida, H., Asahi, H.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Conference Proceeding
Magnetic and optical properties of GaMnN grown by ammonia-source molecular-beam epitaxy
Hashimoto, M., Zhou, Y.K., Tampo, H., Kanamura, M., Asahi, H.
Published in Journal of crystal growth (01.05.2003)
Published in Journal of crystal growth (01.05.2003)
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An over 200-W output power GaN HEMT push-pull amplifier with high reliability
Kikkawa, T., Maniwa, T., Hayashi, H., Kanamura, M., Yokokawa, S., Nishi, M., Adachi, N., Yokoyama, M., Tateno, Y., Joshin, K.
Published in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) (2004)
Published in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) (2004)
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Conference Proceeding
1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications
Gupta, G., Kanamura, M., Swenson, B., Neufeld, C., Hosoda, T., Parikh, P., Lal, R., Mishra, U.
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer
Kanamura, M., Ohki, T., Imanishi, K., Makiyama, K., Okamoto, N., Kikkawa, T., Hara, N., Joshin, K.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Inoue, Y., Masuda, S., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Hara, N., Shigematsu, H., Joshin, K.
Published in 2007 IEEE/MTT-S International Microwave Symposium (01.06.2007)
Published in 2007 IEEE/MTT-S International Microwave Symposium (01.06.2007)
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Conference Proceeding
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics
Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A., Hara, N.
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
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Enhancement-mode GaN MIS-HEMTs for power supplies
Imada, T, Kanamura, M, Kikkawa, T
Published in The 2010 International Power Electronics Conference - ECCE ASIA (01.06.2010)
Published in The 2010 International Power Electronics Conference - ECCE ASIA (01.06.2010)
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Conference Proceeding
Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region
Zhou, Y.K, Asahi, H, Okumura, S, Kanamura, M, Asakura, J, Asami, K, Nakajima, M, Harima, H, Gonda, S
Published in Journal of crystal growth (01.07.2001)
Published in Journal of crystal growth (01.07.2001)
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High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage
Kikkawa, T., Nagahara, M., Adachi, N., Yokokawa, S., Kato, S., Yokoyama, M., Kanamura, M., Yamaguchi, Y., Hara, N., Joshin, K.
Published in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 (2003)
Published in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 (2003)
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Conference Proceeding
Growth of InMnAsSb/InSb heterostructures with mid-infrared light-induced ferromagnetic properties
Kanamura, M., Zhou, Y.K., Okumura, S., Asami, K., Nakajima, M., Harima, H., Asahi, H.
Published in Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) (2001)
Published in Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) (2001)
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Conference Proceeding
C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE
Shigematsu, H., Inoue, Y., Akasegawa, A., Yamada, M., Masuda, S., Kamada, Y., Yamada, A., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Joshin, K., Hara, N.
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
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Conference Proceeding
Suppression of threshold voltage shift for normally-Off GaN MIS-HEMT without post deposition annealing
Kanamura, M., Ohki, T., Ozaki, S., Nishimori, M., Tomabechi, S., Kotani, J., Miyajima, T., Nakamura, N., Okamoto, N., Kikkawa, T., Watanabe, K.
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
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Conference Proceeding
Reliability of GaN HEMTs: current status and future technology
Ohki, T., Kikkawa, T., Inoue, Y., Kanamura, M., Okamoto, N., Makiyama, K., Imanishi, K., Shigematsu, H., Joshin, K., Hara, N.
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
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Conference Proceeding
High current operation of enhancement-mode GaN MIS-HEMTs with triple cap structure using atomic layer deposited Al2O3 gate insulator
Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Hara, N.
Published in 2009 Device Research Conference (01.06.2009)
Published in 2009 Device Research Conference (01.06.2009)
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Conference Proceeding
Serological evaluation of human T lymphotropic virus type-I infection in routine hospital samples, especially using serodia.HTLV-I
Kamihira, S, Nakashima, S, Fukahori, Y, Toriya, K, Kanamura, M, Ohta, T
Published in Rinsho byori. The Japanese journal of clinical pathology (01.07.1990)
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Published in Rinsho byori. The Japanese journal of clinical pathology (01.07.1990)
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