Search Results - "Kamoshida, Ryo" :: K.UTB vyhledávací portál

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

by Akazawa, Masamichi, Kamoshida, Ryo, Murai, Shunta, Kachi, Tetsu, Uedono, Akira
Published in Japanese Journal of Applied Physics (01.01.2021)

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Noise power spectrum in compressed sensing magnetic resonance imaging

by Takahashi, Junji, Machida, Yoshio, Aoba, Minami, Nawa, Yuki, Kamoshida, Ryo, Fukuzawa, Kei, Ohmoto-Sekine, Yuki
Published in Radiological physics and technology (01.03.2021)

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Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

by Akazawa, Masamichi, Kamoshida, Ryo
Published in Japanese Journal of Applied Physics (01.09.2020)

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Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

by Akazawa, Masamichi, Kamoshida, Ryo, Murai, Shunta, Narita, Tetsuo, Omori, Masato, Suda, Jun, Kachi, Tetsu
Published in physica status solidi (b) (01.02.2020)

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