Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed
Sochacki, Tomasz, Amilusik, Mikolaj, Fijalkowski, Michal, Iwinska, Malgorzata, Lucznik, Boleslaw, Weyher, Jan L., Kamler, Grzegorz, Kucharski, Robert, Grzegory, Izabella, Bockowski, Michal
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2015)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2015)
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Journal Article
Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds
Sochacki, Tomasz, Amilusik, Mikolaj, Lucznik, Boleslaw, Fijalkowski, Michal, Weyher, Janusz Ludwik, Sadovyi, Bohdan, Kamler, Grzegorz, Nowak, Grzegorz, Litwin-Staszewska, Elzbieta, Khachapuridze, Aleksander, Grzegory, Izabella, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Bockowski, Michal
Published in Japanese Journal of Applied Physics (01.05.2014)
Published in Japanese Journal of Applied Physics (01.05.2014)
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Journal Article
Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy
Teisseyre, Henryk, Domagala, Jaroslaw Zbigniew, Lucznik, Boleslaw, Reszka, Anna, Kowalski, Bogdan Jerzy, Bockowski, Michal, Kamler, Grzegorz, Grzegory, Izabella
Published in Applied physics express (01.01.2012)
Published in Applied physics express (01.01.2012)
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Journal Article
Bulk GaN crystals and wafers grown by HVPE without intentional doping
Łucznik, Bolesław, Pastuszka, Bogdan, Weyher, Jan L., Kamler, Grzegorz, Grzegory, Izabella, Porowski, Sylwester
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, Shane R., Khachariya, Dolar, Mecouch, Will, Mita, Seiji, Reddy, Pramod, Tweedie, James, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramon, Pavlidis, Spyridon
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, Dolar, Stein, Shane, Mecouch, Will, Breckenridge, M. Hayden, Rathkanthiwar, Shashwat, Mita, Seiji, Moody, Baxter, Reddy, Pramod, Tweedie, James, Kirste, Ronny, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko
Published in Applied physics express (01.10.2022)
Published in Applied physics express (01.10.2022)
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Journal Article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Stein, Shane R., Khachariya, Dolar, Mita, Seiji, Breckenridge, M. Hayden, Tweedie, James, Reddy, Pramod, Sierakowski, Kacper, Kamler, Grzegorz, Boćkowski, Michał, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon
Published in Applied physics express (01.03.2023)
Published in Applied physics express (01.03.2023)
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Journal Article
Chemical Vapor Deposition of Monolayer MoS 2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, Rohan, Vaidya, Shipra, Szymanski, Dennis, Khachariya, Dolar, Bockowski, Michal, Kamler, Grzegorz, Reddy, Pramod, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon
Published in ACS applied nano materials (14.04.2023)
Published in ACS applied nano materials (14.04.2023)
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Journal Article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N‑Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, Rohan, Vaidya, Shipra, Szymanski, Dennis, Khachariya, Dolar, Bockowski, Michal, Kamler, Grzegorz, Reddy, Pramod, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon
Published in ACS applied nano materials (14.04.2023)
Published in ACS applied nano materials (14.04.2023)
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Journal Article
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Sochacki, Tomasz, Bryan, Zachary, Amilusik, Mikolaj, Collazo, Ramon, Lucznik, Boleslaw, Weyher, Jan L, Nowak, Grzegorz, Sadovyi, Bogdan, Kamler, Grzegorz, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Dwilinski, Robert, Grzegory, Izabella, Bockowski, Michal, Sitar, Zlatko
Published in Applied physics express (01.07.2013)
Published in Applied physics express (01.07.2013)
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Journal Article
Processing of Mechanically Polished Surfaces of Bulk GaN Substrates
Nowak, Grzegorz, Kamler, Grzegorz, Weyher, Janusz L, Grzegory, Izabella
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article
Bulk GaN single-crystals growth
Kamler, Grzegorz, Zachara, Janusz, Podsiadło, Sławomir, Adamowicz, Leszek, Gębicki, Wojciech
Published in Journal of crystal growth (2000)
Published in Journal of crystal growth (2000)
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Journal Article
Growth of bulk Ga1-xMnxN single crystals
SZYSZKO, Tomasz, KAMLER, Grzegorz, STROJEK, Beata, WEISBROD, Grzegorz, PODSIADŁO, Sławomir, ADAMOWICZ, Leszek, GEBICKI, Wojciech, SZCZYTKO, Jacek, TWARDOWSKI, Andrzej, SIKORSKI, Krzysztof
Published in Journal of crystal growth (01.12.2001)
Published in Journal of crystal growth (01.12.2001)
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Journal Article
Growth of bulk Ga 1− xMn xN single crystals
Szyszko, Tomasz, Kamler, Grzegorz, Strojek, Beata, Weisbrod, Grzegorz, Podsiadło, Sławomir, Adamowicz, Leszek, Gębicki, Wojciech, Szczytko, Jacek, Twardowski, Andrzej, Sikorski, Krzysztof
Published in Journal of crystal growth (2001)
Published in Journal of crystal growth (2001)
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Journal Article
Processing of Mechanically Polished Surfaces of Bulk GaN Substrates
Nowak, Grzegorz, Kamler, Grzegorz, Weyher, Janusz L, Grzegory, Izabella
Published in Meeting abstracts (Electrochemical Society) (01.08.2011)
Published in Meeting abstracts (Electrochemical Society) (01.08.2011)
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