Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
Iwasaki, Shin, Maeda, Masatoshi, Kamimura, Takafumi, Maehashi, Kenzo, Ohno, Yasuhide, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Protein Sensor Using Carbon Nanotube Field Effect Transistor
Kojima, Atsuhiko, Hyon, Chan Kyeong, Kamimura, Takafumi, Maeda, Masatoshi, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device
Kamimura, Takafumi, Ohno, Yasuhide, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.01.2009)
Published in Japanese Journal of Applied Physics (01.01.2009)
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Journal Article
Carbon Nanotube Fabry–Perot Device for Detection of Multiple Single Charge Transitions
Kamimura, Takafumi, Ohono, Yasuhide, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.02.2009)
Published in Japanese Journal of Applied Physics (01.02.2009)
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Journal Article
Current Status of Gallium Oxide-Based Power Device Technology
Higashiwaki, Masataka, Sasaki, Kohei, Wong, Man Hoi, Kamimura, Takafumi, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Published in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2015)
Published in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2015)
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Conference Proceeding
Non Contact Atomic Force Microscope Electrical Manipulation of Carbon Nanotubes and Its Application to Fabrication of a Room Temperature Operating Single Electron Transistor
Hyon, Chan Kyeong, Kojima, Atsuhiko, Kamimura, Takafumi, Maeda, Masatoshi, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Effect of (AlGa) 2 O 3 back barrier on device characteristics of β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel
Kamimura, Takafumi, Nakata, Yoshiaki, Higashiwaki, Masataka
Published in Japanese Journal of Applied Physics (01.03.2021)
Published in Japanese Journal of Applied Physics (01.03.2021)
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Journal Article
Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3(010) and its suppressed interface state density
Kamimura, Takafumi, Krishnamurthy, Daivasigamani, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
Kamimura, Takafumi, Maeda, Masatoshi, Sakamoto, Kazue, Matsumoto, Kazuhiko
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates
Wang, Zhenwei, Kumar, Sandeep, Kamimura, Takafumi, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
Published in Japanese Journal of Applied Physics (01.10.2024)
Published in Japanese Journal of Applied Physics (01.10.2024)
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Journal Article