High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
Kashima, Yukio, Maeda, Noritoshi, Matsuura, Eriko, Jo, Masafumi, Iwai, Takeshi, Morita, Toshiro, Kokubo, Mitsunori, Tashiro, Takaharu, Kamimura, Ryuichiro, Osada, Yamato, Takagi, Hideki, Hirayama, Hideki
Published in Applied physics express (01.01.2018)
Published in Applied physics express (01.01.2018)
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Journal Article
Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching
Yamada, Shinji, Omori, Masato, Sakurai, Hideki, Osada, Yamato, Kamimura, Ryuichiro, Hashizume, Tamotsu, Suda, Jun, Kachi, Tetsu
Published in Applied physics express (01.01.2020)
Published in Applied physics express (01.01.2020)
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Journal Article
Reversal of Regioselectivity in Wacker-Type Oxidation of Simple Terminal Alkenes and Its Paired Interacting Orbitals (PIO) Analysis
Ogura, Toshihiko, Kamimura, Ryuichiro, Shiga, Akinobu, Hosokawa, Takahiro
Published in Bulletin of the Chemical Society of Japan (01.08.2005)
Published in Bulletin of the Chemical Society of Japan (01.08.2005)
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Journal Article
Fabrication of fine patterned structure for high-density Fan-Out Wafer Level Package using dry etching technology
Hironiwa, Daisuke, Zuo, Chao, Hsieh, Yao-Chih, Suzuki, Taichi, Morikawa, Yasuhiro, Kamimura, Ryuichiro
Published in 2020 21st International Conference on Electronic Packaging Technology (ICEPT) (01.08.2020)
Published in 2020 21st International Conference on Electronic Packaging Technology (ICEPT) (01.08.2020)
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Conference Proceeding
Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer
Wakejima, Akio, Ando, Akihiro, Watanabe, Arata, Inoue, Keita, Kubo, Toshiharu, Osada, Yamato, Kamimura, Ryuichiro, Egawa, Takashi
Published in Applied physics express (01.02.2015)
Published in Applied physics express (01.02.2015)
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Journal Article
DEEP ULTRAVIOLET LED
NAGANO Tsugumi, IWAISAKO Yasushi, SHINOHARA Hidetoshi, MOURI Kengo, KASHIMA Yukio, OSADA Yamato, KAMIMURA Ryuichiro, MATSUURA Eriko, OOGAMI Hiroyuki, HIRAYAMA Hideki, IWAI Takeshi
Year of Publication 02.05.2024
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Year of Publication 02.05.2024
Patent
MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
OSADA YAMATO, YAMADA SHINJI, SAKURAI HIDEKI, SUDA ATSUSHI, KAMIMURA RYUICHIRO
Year of Publication 06.02.2020
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Year of Publication 06.02.2020
Patent
Efficient double bond migration of allylbenzenes catalyzed by Pd(OAc)(2)-HFIP system with unique substituent effect
Nishiwaki, Nagatoshi, Kamimura, Ryuichiro, Shono, Kimihiro, Kawakami, Toshihiko, Nakayama, Katsuhisa, Nishino, Kohei, Nakayama, Takayuki, Takahashi, Keisuke, Nakamura, Aid, Hosokawa, Takahiro
Published in Tetrahedron letters (07.07.2010)
Published in Tetrahedron letters (07.07.2010)
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Journal Article
Efficient double bond migration of allylbenzenes catalyzed by Pd(OAc) 2–HFIP system with unique substituent effect
Nishiwaki, Nagatoshi, Kamimura, Ryuichiro, Shono, Kimihiro, Kawakami, Toshihiko, Nakayama, Katsuhisa, Nishino, Kohei, Nakayama, Takayuki, Takahashi, Keisuke, Nakamura, Aki, Hosokawa, Takahiro
Published in Tetrahedron letters (2010)
Published in Tetrahedron letters (2010)
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Journal Article
PLASMA TREATMENT DEVICE AND WAFER TRANSPORTATION TRAY
OSADA YAMATO, NAKAMURA TOSHIYUKI, MORIGUCHI NAOKI, AIHARA TSUYOSHI, KAMIMURA RYUICHIRO
Year of Publication 21.09.2016
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Year of Publication 21.09.2016
Patent