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Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET
by
Singh, S K
,
Gupta, A
,
Yu, H W
,
Nagarajan, V
,
Anandan, D
,
Kakkerla
,
R K
,
Chang, E Y
Published in
Materials research express
(01.11.2017)
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band-to-band tunneling
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interface trap charge
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materials science
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materials science, multidisciplinary
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science & technology
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sub-threshold swing
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