Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
Matsuura, Hideharu, Komeda, Masahiko, Kagamihara, Sou, Iwata, Hirofumi, Ishihara, Ryohei, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kojima, Kazutoshi, Shinohe, Takashi, Arai, Kazuo
Published in Journal of applied physics (01.09.2004)
Published in Journal of applied physics (01.09.2004)
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Journal Article
Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC
Kagamihara, Sou, Matsuura, Hideharu, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kushibe, Mitsuhiro, Shinohe, Takashi, Arai, Kazuo
Published in Journal of applied physics (15.11.2004)
Published in Journal of applied physics (15.11.2004)
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Journal Article
Si Substrate Suitable for Radiation-Resistant Space Solar Cells
Matsuura, Hideharu, Iwata, Hirofumi, Kagamihara, Sou, Ishihara, Ryohei, Komeda, Masahiko, Imai, Hideaki, Kikuta, Masanori, Inoue, Yuuki, Hisamatsu, Tadashi, Kawakita, Shirou, Ohshima, Takeshi, Itoh, Hisayoshi
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation
Matsuura, Hideharu, Kagamihara, Sou, Itoh, Yuji, Ohshima, Takeshi, Itoh, Hisayoshi
Published in Microelectronic engineering (2006)
Published in Microelectronic engineering (2006)
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Journal Article
Conference Proceeding
Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration
Matsuura, Hideharu, Morizono, Tatsuya, Inoue, Yuuki, Kagamihara, Sou, Namba, Akihiko, Imai, Takahiro, Takebe, Toshihiko
Published in Japanese Journal of Applied Physics (01.08.2006)
Published in Japanese Journal of Applied Physics (01.08.2006)
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Journal Article