Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs
Sasaki, Hajime, Hisaka, Takayuki, Kadoiwa, Kaoru, Oku, Tomoki, Onoda, Shinobu, Ohshima, Takeshi, Taguchi, Eiji, Yasuda, Hidehiro
Published in Microelectronics and reliability (01.02.2018)
Published in Microelectronics and reliability (01.02.2018)
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Journal Article
Reliability study on high-power 638nm broad stripe laser diode
Mitsuyama, Hiroshi, Motoda, Takashi, Nishida, Takehiro, Kadoiwa, Kaoru, Yagi, Tetsuya
Published in Optical review (Tokyo, Japan) (2014)
Published in Optical review (Tokyo, Japan) (2014)
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Journal Article
p-Substrate Partially Inverted Buried Heterostructure Distributed Feedback Laser Diode Performance Improvement by Inserting Zn Diffusion-Stopping Layer
Kadoiwa, Kaoru, Ono, Kenichi, Nishiguchi, Harumi, Matsumoto, Keisuke, Ohkura, Yuji, Yagi, Tetsuya
Published in Japanese Journal of Applied Physics (01.10.2006)
Published in Japanese Journal of Applied Physics (01.10.2006)
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Journal Article
EVALUATION METHOD OF AVALANCHE PHOTODIODE
OTSUKI TAKASHI, INOUE KOICHI, SASAKI HAJIME, ISHIMURA EITARO, KADOIWA KAORU
Year of Publication 13.09.2021
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Year of Publication 13.09.2021
Patent
Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation
Sasaki, Hajime, Kadoiwa, Kaoru, Koyama, Hidetoshi, Kamo, Yoshitaka, Yamamoto, Yoshitsugu, Oishi, Toshiyuki, Hayashi, Kazuo
Published in Microelectronics and reliability (01.12.2014)
Published in Microelectronics and reliability (01.12.2014)
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Journal Article
Conference Proceeding
Crack propagation and mechanical fracture in GaAs-on-Si
HAYAFUJI, N, KIZUKI, H, MIYASHITA, M, KADOIWA, K, NISHIMURA, T, OGASAWARA, N, KUMABE, H, MUROTANI, T, TADA, A
Published in Japanese Journal of Applied Physics (01.03.1991)
Published in Japanese Journal of Applied Physics (01.03.1991)
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Journal Article
GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki
Published in Japanese Journal of Applied Physics (01.10.1989)
Published in Japanese Journal of Applied Physics (01.10.1989)
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Journal Article
Novel InGaAs contact layer growth for hetero-junction bipolar transistors (HBTs) by using the multiple group-V source molecular beam epitaxy (MBE) system
Kadoiwa, Kaoru, Izumi, Shigekazu, Yamamoto, Yoshitsugu, Hayafuji, Norio, Sonoda, Takuji
Published in Journal of crystal growth (01.05.1999)
Published in Journal of crystal growth (01.05.1999)
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Journal Article
150 m W fundamental-transverse-mode operation of 670 nm window laser diode
Arimoto, Satoshi, Yasuda, Mikako, Shima, Akihiro, Kadoiwa, Kaoru, Kamizato, Takeshi, Wantanabe, Hitoshi, Omura, Etsuji, Aiga, Masao, Ikeda, Kenji, Mitsui, Shigeru
Published in IEEE journal of quantum electronics (01.01.1993)
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Published in IEEE journal of quantum electronics (01.01.1993)
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