531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
Enya, Yohei, Yoshizumi, Yusuke, Kyono, Takashi, Akita, Katsushi, Ueno, Masaki, Adachi, Masahiro, Sumitomo, Takamichi, Tokuyama, Shinji, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.08.2009)
Published in Applied physics express (01.08.2009)
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Journal Article
Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Yoshizumi, Yusuke, Adachi, Masahiro, Enya, Yohei, Kyono, Takashi, Tokuyama, Shinji, Sumitomo, Takamichi, Akita, Katsushi, Ikegami, Takatoshi, Ueno, Masaki, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.09.2009)
Published in Applied physics express (01.09.2009)
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Journal Article
Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Kyono, Takashi, Yoshizumi, Yusuke, Enya, Yohei, Adachi, Masahiro, Tokuyama, Shinji, Ueno, Masaki, Katayama, Koji, Nakamura, Takao
Published in Applied physics express (01.01.2010)
Published in Applied physics express (01.01.2010)
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Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors
Arikata, Suguru, Kyono, Takashi, Miura, Kouhei, Balasekaran, Sundararajan, Inada, Hiroshi, Iguchi, Yasuhiro, Sakai, Michito, Katayama, Haruyoshi, Kimata, Masafumi, Akita, Katsushi
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
Published in Physica status solidi. A, Applications and materials science (01.03.2017)
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Optical Gain Spectroscopy of a Semipolar {20\bar21}-Oriented Green InGaN Laser Diode
Kim, Yoon Seok, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao
Published in Applied physics express (01.05.2011)
Published in Applied physics express (01.05.2011)
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Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy
Kaneta, Akio, Kim, Yoon-Seok, Funato, Mitsuru, Kawakami, Yoichi, Enya, Yohei, Kyono, Takashi, Ueno, Masaki, Nakamura, Takao
Published in Applied physics express (01.10.2012)
Published in Applied physics express (01.10.2012)
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