Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures
Kwon, Dae Woong, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euyhwan, Lee, Junil, Kim, Wandong, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.04.2017)
Published in IEEE transactions on electron devices (01.04.2017)
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Journal Article
Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory
Kwon, Dae woong, Kim, Do-Bin, Lee, Junil, Kim, Sihyun, Lee, Ryoongbin, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.08.2019)
Published in IEEE transactions on electron devices (01.08.2019)
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Journal Article
Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory
Kim, Seunghyun, Kwon, Dae Woong, Lee, Sang-Ho, Park, Sang-Ku, Kim, Youngmin, Kim, Hyungmin, Kim, Young Goan, Cho, Seongjae, Park, Byung-Gook
Published in Journal of semiconductor technology and science (2017)
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Published in Journal of semiconductor technology and science (2017)
Journal Article
Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung-Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
Reduction method of gate-to-drain capacitance by oxide spacer formation in tunnel field-effect transistor with elevated drain
Kwon, Dae Woong, Kim, Jang Hyun, Park, Euyhwan, Lee, Junil, Park, Taehyung, Lee, Ryoongbin, Kim, Sihyun, Park, Byung-Gook
Published in Japanese Journal of Applied Physics (01.06.2016)
Published in Japanese Journal of Applied Physics (01.06.2016)
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Journal Article
Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory
Lee, Sang-Ho, Kim, Wandong, Kwon, Dae Woong, Seo, Joo Yun, Baek, Myung Hyun, Lee, Sungbok, Kang, Jinkyu, Jang, Woojae, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE electron device letters (01.07.2016)
Published in IEEE electron device letters (01.07.2016)
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Journal Article
Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Park, Byung-Gook
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
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Journal Article
Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Choi, Eunseok, Cho, Gyu Seog, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article