Tip-Enhanced Raman Scattering of the Local Nanostructure of Epitaxial Graphene Grown on 4H-SiC (0001̅)
Vantasin, Sanpon, Tanabe, Ichiro, Tanaka, Yoshito, Itoh, Tamitake, Suzuki, Toshiaki, Kutsuma, Yasunori, Ashida, Koji, Kaneko, Tadaaki, Ozaki, Yukihiro
Published in Journal of physical chemistry. C (06.11.2014)
Published in Journal of physical chemistry. C (06.11.2014)
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Journal Article
Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy
Vantasin, Sanpon, Tanaka, Yoshito, Uemura, Shohei, Suzuki, Toshiaki, Kutsuma, Yasunori, Doujima, Daichi, Kaneko, Tadaaki, Ozaki, Yukihiro
Published in Physical chemistry chemical physics : PCCP (01.01.2015)
Published in Physical chemistry chemical physics : PCCP (01.01.2015)
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Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)
Suzuki, Toshiaki, Itoh, Tamitake, Vantasin, Sanpon, Minami, Satoshi, Kutsuma, Yasunori, Ashida, Koji, Kaneko, Tada-aki, Morisawa, Yusuke, Miura, Takeshi, Ozaki, Yukihiro
Published in Physical chemistry chemical physics : PCCP (01.01.2014)
Published in Physical chemistry chemical physics : PCCP (01.01.2014)
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Journal Article
Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
Mizuki, Jun'ichiro, Kutsuma, Yasunori, Kaneko, Tadaaki, Inami, Toshiya, Ohwada, Kenji, Dohjima, Daichi, Ohtani, Noboru, Yoshida, Masahiro
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction
Ashida, Koji, Dojima, Daichi, Kutsuma, Yasunori, Torimi, Satoshi, Nogami, Satoru, Imai, Yasuhiko, Kimura, Shigeru, Mizuki, Jun-ichiro, Ohtani, Noboru, Kaneko, Tadaaki
Published in MRS advances (01.01.2016)
Published in MRS advances (01.01.2016)
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SiC SEMICONDUCTOR DEVICE
NAKANO YUUKI, UENO MAYA, KUTSUMA YASUNORI, NAKAZAWA SEIYA, HARUYAMA SAWA, KAWAKAMI YASUHIRO
Year of Publication 05.07.2024
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Year of Publication 05.07.2024
Patent
SiC SEMICONDUCTOR DEVICE
NAKANO YUUKI, UENO MAYA, KUTSUMA YASUNORI, HARUYAMA SAWA, NAKAZAWA SEIYA, KAWAKAMI YASUHIRO
Year of Publication 01.02.2024
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Year of Publication 01.02.2024
Patent
SiC SEMICONDUCTOR DEVICE
UENO MAYA, NAKANO YUUKI, KUTSUMA YASUNORI, HARUYAMA SAWA, NAKAZAWA SEIYA, KAWAKAMI YASUHIRO
Year of Publication 01.02.2024
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Year of Publication 01.02.2024
Patent
Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopyElectronic supplementary information (ESI) available: Semi-low energy SEM of other similar microislands, Raman imaging of the island showing peak area integral in the D band range, peak resolve of the G′ band in the TERS spectra from a nanoridge, TERS spectra from an edge of the graphene microisland. See DOI: 10.1039/c5cp05014f
Vantasin, Sanpon, Tanaka, Yoshito, Uemura, Shohei, Suzuki, Toshiaki, Kutsuma, Yasunori, Doujima, Daichi, Kaneko, Tadaaki, Ozaki, Yukihiro
Year of Publication 28.10.2015
Year of Publication 28.10.2015
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