Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi
Published in Applied physics letters (28.11.2022)
Published in Applied physics letters (28.11.2022)
Get full text
Journal Article
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Applied physics express (07.11.2019)
Published in Applied physics express (07.11.2019)
Get full text
Journal Article
Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping
Kumabe, Takeru, Yoshikawa, Akira, Kawasaki, Seiya, Kushimoto, Maki, Honda, Yoshio, Arai, Manabu, Suda, Jun, Amano, Hiroshi
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
Get full text
Journal Article
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi
Published in Applied physics express (01.08.2021)
Published in Applied physics express (01.08.2021)
Get full text
Journal Article
Design and characterization of a low-optical-loss UV-C laser diode
Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.09.2020)
Published in Japanese Journal of Applied Physics (01.09.2020)
Get full text
Journal Article
Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
Kushimoto, Maki, Sakai, Tadayoshi, Ueoka, Yoshihiro, Tomai, Shigekazu, Katsumata, Satoshi, Deki, Manato, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Get full text
Journal Article
m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates
Tanaka, Atsushi, Ando, Yuto, Nagamatsu, Kentaro, Deki, Manato, Cheong, Heajeong, Ousmane, Barry, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
Get full text
Journal Article
Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED
Matsubara, Taichi, Nagata, Kengo, Kushimoto, Maki, Tomai, Shigekazu, Katsumata, Satoshi, Honda, Yoshio, Amano, Hiroshi
Published in Applied physics express (01.04.2022)
Published in Applied physics express (01.04.2022)
Get full text
Journal Article
Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
Ye, Zheng, Nitta, Shugo, Nagamatsu, Kentaro, Fujimoto, Naoki, Kushimoto, Maki, Deki, Manato, Tanaka, Atsushi, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (15.06.2019)
Published in Journal of crystal growth (15.06.2019)
Get full text
Journal Article
Morphological study of InGaN on GaN substrate by supersaturation
Liu, Zhibin, Nitta, Shugo, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (15.02.2019)
Published in Journal of crystal growth (15.02.2019)
Get full text
Journal Article
Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate
Kushimoto, Maki, Zhang, Ziyi, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2022)
Published in Japanese Journal of Applied Physics (01.01.2022)
Get full text
Journal Article
Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Takahashi, Masahiro, Tanaka, Atsushi, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Chen, Kevin J., Amano, Hiroshi
Published in physica status solidi (b) (01.04.2020)
Published in physica status solidi (b) (01.04.2020)
Get full text
Journal Article
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu, Zhibin, Nitta, Shugo, Usami, Shigeyoshi, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (01.03.2019)
Published in Journal of crystal growth (01.03.2019)
Get full text
Journal Article
Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes
Usami, Shigeyoshi, Miyagoshi, Ryosuke, Tanaka, Atsushi, Nagamatsu, Kentaro, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Get full text
Journal Article
V-shaped dislocations in a GaN epitaxial layer on GaN substrate
Tanaka, Atsushi, Nagamatsu, Kentaro, Usami, Shigeyoshi, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Bockowski, Michal, Amano, Hiroshi
Published in AIP advances (01.09.2019)
Published in AIP advances (01.09.2019)
Get full text
Journal Article
A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
Nagata, Kengo, Matsubara, Taichi, Saito, Yoshiki, Kataoka, Keita, Narita, Tetsuo, Horibuchi, Kayo, Kushimoto, Maki, Tomai, Shigekazu, Katsumata, Satoshi, Honda, Yoshio, Takeuchi, Tetsuya, Amano, Hiroshi
Published in Crystals (Basel) (01.03.2023)
Published in Crystals (Basel) (01.03.2023)
Get full text
Journal Article
Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
Matsumoto, Koji, Ono, Toshiaki, Honda, Yoshio, Yamamoto, Tetsuya, Usami, Shigeyoshi, Kushimoto, Maki, Murakami, Satoshi, Amano, Hiroshi
Published in physica status solidi (b) (01.05.2018)
Published in physica status solidi (b) (01.05.2018)
Get full text
Journal Article
Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
Yang, Xu, Nitta, Shugo, Pristovsek, Markus, Liu, Yuhuai, Nagamatsu, Kentaro, Kushimoto, Maki, Honda, Yoshio, Amano, Hiroshi
Published in Applied physics express (01.05.2018)
Published in Applied physics express (01.05.2018)
Get full text
Journal Article