Reliability issues of GaN based high voltage power devices
Wuerfl, J., Bahat-Treidel, E., Brunner, F., Cho, E., Hilt, O., Ivo, P., Knauer, A., Kurpas, P., Lossy, R., Schulz, M., Singwald, S., Weyers, M., Zhytnytska, R.
Published in Microelectronics and reliability (01.09.2011)
Published in Microelectronics and reliability (01.09.2011)
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Conference Proceeding
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
Chevtchenko, S.A., Schulz, M., Bahat-Treidel, E., John, W., Freyer, S., Kurpas, P., Würfl, J.
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Conference Proceeding
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
Zettler, J.-T., Haberland, K., Zorn, M., Pristovsek, M., Richter, W., Kurpas, P., Weyers, M.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Conference Proceeding
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Brunner, F, Bergunde, T, Richter, E, Kurpas, P, Achouche, M, Maaßdorf, A, Würfl, J, Weyers, M
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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Journal Article
Conference Proceeding
Investigation of breakdown and DC behavior in HBTs with (Al,Ga)As collector layer
Maassdorf, A., Kurpas, P., Brunner, F., Weyers, M., Trankle, G.
Published in IEEE electron device letters (01.10.2004)
Published in IEEE electron device letters (01.10.2004)
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Journal Article
Spectroscopic process sensors in MOVPE device production
HABERLAND, K, KURPAS, P, PRISTOVSEK, M, ZETTLER, J.-T, WEYERS, M, RICHTER, W
Published in Applied physics. A, Materials science & processing (01.03.1999)
Published in Applied physics. A, Materials science & processing (01.03.1999)
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Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE
Brunner, F., Braun, A., Kurpas, P., Schneider, J., Würfl, J., Weyers, M.
Published in Microelectronics and reliability (01.06.2003)
Published in Microelectronics and reliability (01.06.2003)
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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
BRUNNER, F, RICHTER, E, WEYERS, M, BERGUNDE, T, RECHENBERG, I, BHATTACHARYA, A, MAASSDORF, A, TOMM, J. W, KURPAS, P, ACHOUCHE, M, WÜRFL, J
Published in Journal of electronic materials (01.02.2000)
Published in Journal of electronic materials (01.02.2000)
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Journal Article
High-voltage GaAs power-HBTs for base-station amplifiers
Kurpas, P., Brunner, F., Doemer, R., Janke, B., Heymann, P., Maasdorf, A., Doser, W., Auxemery, P., Blanck, H., Pons, D., Wurfl, J., Heinrich, W.
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
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Conference Proceeding
Journal Article
In situ monitoring and control of InGaP growth on GaAs in MOVPE
Zorn, M., Trepk, T., Kurpas, P., Weyers, M., Zettler, J.-T., Richter, W.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Conference Proceeding
Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide
RICHTER, E, KURPAS, P, GUTSCHE, D, WEYERS, M
Published in Journal of electronic materials (01.11.1995)
Published in Journal of electronic materials (01.11.1995)
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Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy
Kurpas, P., Jönsson, J., Richter, W., Gutsche, D., Pristovsek, M., Zorn, M.
Published in Journal of crystal growth (01.12.1994)
Published in Journal of crystal growth (01.12.1994)
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Journal Article
Conference Proceeding
On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy
Kurpas, P., Sato, M., Knauer, A., Weyers, M.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
Kurpas, P., Rumberg, A., Weyers, M., Knorr, K., Bergunde, T., Sato, M., Richter, W.
Published in Journal of crystal growth (01.01.1997)
Published in Journal of crystal growth (01.01.1997)
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Conference Proceeding
Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy
Kurpas, P., Oster, A., Weyers, M., Rumberg, A., Knorr, K., Richter, W.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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Journal Article
MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
KURPAS, P, RICHTER, E, SATO, M, BRUNNER, F, GUTSCHE, D, WEYERS, M
Published in Journal of crystal growth (1997)
Published in Journal of crystal growth (1997)
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Conference Proceeding
Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors
Richter, E., Kurpas, P., Sato, M., Trapp, M., Zeimer, U., Hähle, S., Weyers, M.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.02.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.02.1997)
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