Water electrolysis using diamond thin-film electrodes
KATSUKI, N, TAKAHASHI, E, TOYODA, M, KUROSU, T, IIDA, M, WAKITA, S, NISHIKI, Y, SHIMAMUNE, T
Published in Journal of the Electrochemical Society (01.07.1998)
Published in Journal of the Electrochemical Society (01.07.1998)
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Formation mechanism of p-type surface conductive layer on deposited diamond films
RI SUNG GI, MIZUMASA, T, AKIBA, Y, HIROSE, Y, KUROSU, T, IIDA, M
Published in Japanese Journal of Applied Physics (01.10.1995)
Published in Japanese Journal of Applied Physics (01.10.1995)
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Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique
Takayuki Takida, Takayuki Takida, Kouji Inoue, Kouji Inoue, Sung-Gi Ri, Sung-Gi Ri, Hideki Kimura, Hideki Kimura, Hideo Kiyota, Hideo Kiyota, Ichiro Saito, Ichiro Saito, Tateki Kurosu, Tateki Kurosu, Masamori Iida, Masamori Iida
Published in Japanese Journal of Applied Physics (01.01.2000)
Published in Japanese Journal of Applied Physics (01.01.2000)
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Fabrication of metal-insulator-semiconductor devices using polycrystalline diamond film
KIYOTA, H, OKANO, K, IWASAKI, T, IZUMIYA, H, AKIBA, Y, KUROSU, T, IIDA, M
Published in Japanese Journal of Applied Physics (01.12.1991)
Published in Japanese Journal of Applied Physics (01.12.1991)
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Amorphous carbon and carbon nitride films synthesized by electrolysis of nitrogen-containing liquid
Wang, Hao, Kiyota, Hideo, Miyo, Toshiya, Kitaguchi, Keita, Shiga, Tomohito, Kurosu, Tateki, Zhu, He-Sun, Iida, Masamori
Published in Diamond and related materials (01.07.2000)
Published in Diamond and related materials (01.07.2000)
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Backward diode characteristics of p-type diamond/n-type silicon heterojunction diodes
PHETCHAKUL, T, KIMURA, H, AKIBA, Y, KUROSU, T, IIDA, M
Published in Japanese Journal of Applied Physics (01.08.1996)
Published in Japanese Journal of Applied Physics (01.08.1996)
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Space charge limited current in semiconducting diamond films
MATSUMAE, Y, AKIBA, Y, HIROSE, Y, KUROSU, T, IIDA, M
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO 2 and NH 3 Atmospheres
Gi, Ri, Kazuhiro Tashiro, Kazuhiro Tashiro, Seiichi Tanaka, Seiichi Tanaka, Takao Fujisawa, Takao Fujisawa, Hideki Kimura, Hideki Kimura, Tateki Kurosu, Tateki Kurosu, Masamori Iida, Masamori Iida
Published in Japanese Journal of Applied Physics (01.06.1999)
Published in Japanese Journal of Applied Physics (01.06.1999)
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Characterization of boron-doped diamond film
OKANO, K, NARUKI, H, AKIBA, Y, KUROSU, T, IIDA, M, HIROSE, Y, NAKAMURA, T
Published in Japanese Journal of Applied Physics (01.06.1989)
Published in Japanese Journal of Applied Physics (01.06.1989)
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Synthesis of diamond thin films having semiconductive properties
OKANO, K, NARUKI, H, AKIBA, Y, KUROSU, T, IIDA, M, HIROSE, Y
Published in Japanese Journal of Applied Physics (01.02.1988)
Published in Japanese Journal of Applied Physics (01.02.1988)
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Junction properties of polycrystalline diamond/hydrogenated amorphous silicon p-n heterojunctions
KIYOTA, H, OKUSHI, H, OKANO, K, AKIBA, Y, KUROSU, T, IIDA, M
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.09.1993)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.09.1993)
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Journal Article
Polycrystalline diamond/hydrogenated amorphous silicon P-N heterojunction
KIYOTA, H, YONEDA, M, IZUMIYA, H, OKUSHI, H, OKANO, K, KUROSU, T, IIDA, M
Published in Japanese Journal of Applied Physics (01.04.1992)
Published in Japanese Journal of Applied Physics (01.04.1992)
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