Practical applications of SiC-MOSFETs and further developments
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Published in Semiconductor science and technology (26.01.2016)
Published in Semiconductor science and technology (26.01.2016)
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Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells
Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, Kobayashi, Hiroshi
Published in Journal of magnetism and magnetic materials (01.02.2005)
Published in Journal of magnetism and magnetic materials (01.02.2005)
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Conference Proceeding
13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters
Nakayama, Koji, Kuroiwa, Takeharu, Yamaguchi, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2022)
Published in Japanese Journal of Applied Physics (01.01.2022)
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Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
Furukawa, Taisuke, Kuroiwa, Takeharu, Fujisaki, Yoshihisa, Sato, Takehiko, Ishiwara, Hiroshi
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Dielectric relaxation of (Ba, Sr)TiO3 thin films
HORIKAWA, T, MAKITA, T, KUROIWA, T, MIKAMI, N
Published in Japanese journal of applied physics (1995)
Published in Japanese journal of applied physics (1995)
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Conference Proceeding
Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs
Senzaki, Junji, Kosugi, Ryoji, Masumoto, Keiko, Mitani, Takeshi, Kuroiwa, Takeharu, Yamaguchi, Hiroshi
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Electric properties of SrTiO3 thin films prepared by RF sputtering
KUROIWA, T, HONDA, T, WATARAI, H, SATO, K
Published in Japanese journal of applied physics (01.09.1992)
Published in Japanese journal of applied physics (01.09.1992)
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Conference Proceeding
Accuracy of the Energy Distribution of the Interface States at the SiO sub(2)/SiC Interface by Conductance Method
Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Watanabe, Hiroshi, Nakata, Shuhei, Kuroiwa, Takeharu, Yamakawa, Satoshi
Published in Materials Science Forum (01.05.2016)
Published in Materials Science Forum (01.05.2016)
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Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
Kawabata, Naoyuki, Watanabe, Hiroshi, Tanaka, Takanori, Tomita, Nobuyuki, Miura, Naruhisa, Yamakawa, Satoshi, Tominaga, Takaaki, Koyama, Akihiro, Kuroiwa, Takeharu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method
Watanabe, Hiroshi, Kuroiwa, Takeharu, Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Yamakawa, Satoshi, Nakata, Shuhei
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
Imaizumi, Masayuki, Toyoda, Yoshihiko, Tanaka, Takanori, Mitani, Yoichiro, Sumitani, Hiroaki, Tomita, Nobuyuki, Kuroiwa, Takeharu, Yamakawa, Satoshi, Sakai, Masashi, Tarutani, Masayoshi, Kawabata, Naoyuki
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
SEMICONDUCTOR DEVICE
KONISHI KAZUYA, EBIHARA KOHEI, KUROIWA TAKEHARU, SUGAWARA KATSUTOSHI, KAGAWA YASUHIRO
Year of Publication 22.06.2017
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Year of Publication 22.06.2017
Patent
SILICON CARBIDE SEMICONDUCTOR DEVICE
FUKUI Yutaka, KAGAWA Yasuhiro, TANAKA Rina, SUGAWARA Katsutoshi, KUROIWA Takeharu
Year of Publication 08.06.2017
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Year of Publication 08.06.2017
Patent