State-of-the-art technologies of gallium oxide power devices
Higashiwaki, Masataka, Kuramata, Akito, Murakami, Hisashi, Kumagai, Yoshinao
Published in Journal of physics. D, Applied physics (26.07.2017)
Published in Journal of physics. D, Applied physics (26.07.2017)
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Journal Article
Development of gallium oxide power devices
Higashiwaki, Masataka, Sasaki, Kohei, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
Published in Physica status solidi. A, Applications and materials science (01.01.2014)
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Journal Article
Current status of Ga2O3 power devices
Higashiwaki, Masataka, Murakami, Hisashi, Kumagai, Yoshinao, Kuramata, Akito
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
MBE grown Ga2O3 and its power device applications
Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Journal Article
Conference Proceeding
Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates
Yang, Jiancheng, Ren, Fan, Pearton, Steve J., Kuramata, Akito
Published in IEEE transactions on electron devices (01.07.2018)
Published in IEEE transactions on electron devices (01.07.2018)
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Journal Article
β-Gallium oxide power electronics
Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka
Published in APL materials (01.02.2022)
Published in APL materials (01.02.2022)
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Journal Article
Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography
Yao, Yongzhao, Tsusaka, Yoshiyuki, Hirano, Keiichi, Sasaki, Kohei, Kuramata, Akito, Sugawara, Yoshihiro, Ishikawa, Yukari
Published in Journal of applied physics (21.10.2023)
Published in Journal of applied physics (21.10.2023)
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Journal Article
Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer
Yao, Yongzhao, Sato, Koji, Sugawara, Yoshihiro, Okada, Narihito, Tadatomo, Kazuyuki, Sasaki, Kohei, Kuramata, Akito, Ishikawa, Yukari
Published in Journal of crystal growth (01.04.2022)
Published in Journal of crystal growth (01.04.2022)
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Journal Article
Highly selective electrochemical reduction of CO2 to HCOOH on a gallium oxide cathode
Sekimoto, Takeyuki, Deguchi, Masahiro, Yotsuhashi, Satoshi, Yamada, Yuka, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu
Published in Electrochemistry communications (01.06.2014)
Published in Electrochemistry communications (01.06.2014)
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Journal Article
Valence and conduction band offsets in AZO/Ga2O3 heterostructures
Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito
Published in Vacuum (01.07.2017)
Published in Vacuum (01.07.2017)
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Journal Article
Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction
Yao, Yongzhao, Sugawara, Yoshihiro, Yokoe, Daisaku, Hirano, Keiichi, Okada, Narihito, Tadatomo, Kazuyuki, Sasaki, Kohei, Kuramata, Akito, Ishikawa, Yukari
Published in Japanese Journal of Applied Physics (01.12.2021)
Published in Japanese Journal of Applied Physics (01.12.2021)
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Journal Article
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
Carey, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, Kravchenko, Ivan I.
Published in AIP advances (01.09.2017)
Published in AIP advances (01.09.2017)
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Journal Article
High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography
Mahadik, Nadeemullah A., Tadjer, Marko J., Bonanno, Peter L., Hobart, Karl D., Stahlbush, Robert E., Anderson, Travis J., Kuramata, Akito
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Journal Article
Electrochemical application of Ga2O3 and related materials: CO2-to-HCOOH conversion
Sekimoto, Takeyuki, Hashiba, Hiroshi, Deguchi, Masahiro, Yotsuhashi, Satoshi, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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Journal Article
High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy
Togashi, Rie, Numata, Shiyu, Hayashida, Mayuko, Suga, Takayuki, Goto, Ken, Kuramata, Akito, Yamakoshi, Shigenobu, Paskov, Plamen, Monemar, Bo, Kumagai, Yoshinao
Published in Japanese Journal of Applied Physics (06.10.2016)
Published in Japanese Journal of Applied Physics (06.10.2016)
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Journal Article
Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2
Togashi, Rie, Kisanuki, Yumi, Goto, Ken, Murakami, Hisashi, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori, Kumagai, Yoshinao
Published in Japanese Journal of Applied Physics (14.11.2016)
Published in Japanese Journal of Applied Physics (14.11.2016)
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Journal Article
Perspective-Opportunities and Future Directions for Ga2O3
Mastro, Michael A., Kuramata, Akito, Calkins, Jacob, Kim, Jihyun, Ren, Fan, Pearton, S. J.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Journal Article