Over 550 V breakdown voltage of InAlN/GaN HEMT on Si
Saito, Hisashi, Takada, Yoshiharu, Kuraguchi, Masahiko, Yumoto, Miki, Tsuda, Kunio
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
Get full text
Journal Article
Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs
Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
Get full text
Journal Article
Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
Saito, Wataru, Takada, Yoshiharu, Kuraguchi, Masahiko, Tsuda, Kunio, Omura, Ichiro, Ogura, Tsuneo
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
Get full text
Journal Article
SEMICONDUCTOR DEVICE
KAJIWARA AKIHIRO, ONO HIROSHI, KURAGUCHI MASAHIKO, KATO HIROMI, SHINDOME AYA
Year of Publication 21.02.2024
Get full text
Year of Publication 21.02.2024
Patent