Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis, G. S., Levin, R. V., Marichev, A. E., Pushnyi, B. V., Scheglov, M. P., Ber, B. Ya, Kazantsev, D. Yu, Kudriavtsev, Yu. A., Vlasov, A. S., Popova, T. B., Chistyakov, D. V., Kuchinskii, V. I., Vasil’ev, V. I.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2019)
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Journal Article
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
Ber, B Ya, Kudriavtsev, Yu A, Merkulov, A V, Novikov, S V, Lacklison, D E, Orton, J W, Cheng, T S, Foxon, C T
Published in Semiconductor science and technology (01.01.1998)
Published in Semiconductor science and technology (01.01.1998)
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Journal Article
MBE growth and characterization of magnesium-doped gallium nitride
Dewsnip, D J, Orton, J W, Lacklison, D E, Flannery, L, Andrianov, A V, Harrison, I, Hooper, S E, Cheng, T S, Foxon, C T, Novikov, S N, Ber, B Ya, Kudriavtsev, Yu A
Published in Semiconductor science and technology (01.08.1998)
Published in Semiconductor science and technology (01.08.1998)
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Journal Article
Incorporation of Mg in GaN grown by molecular beam epitaxy
Orton, J.W., Foxon, C.T., Cheng, T.S., Hooper, S.E., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.
Published in Journal of crystal growth (01.02.1999)
Published in Journal of crystal growth (01.02.1999)
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Journal Article
Incorporation of Mg in GaN grown by molecular beam epitaxy
ORTON, J. W, FOXON, C. T, CHENG, T. S, HOOPER, S. E, NOVIKOV, S. V, BER, B. Ya, KUDRIAVTSEV, Yu. A
Published in Journal of crystal growth (1999)
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Published in Journal of crystal growth (1999)
Journal Article
Studies of p-GaN grown by MBE on GaAs(1 1 1)B
Foxon, C.T., Cheng, T.S., Jeffs, N.J., Dewsnip, J., Flannery, L., Orton, J.W., Harrison, I., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.
Published in Journal of crystal growth (15.06.1998)
Published in Journal of crystal growth (15.06.1998)
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Journal Article
MBE growth and characterization of magnesium-doped gallium nitride
DEWSNIP, D. J, ORTON, J. W, BER, B. Ya, KUDRIAVTSEV, Yu. A, LACKLISON, D. E, FLANNERY, L, ANDRIANOV, A. V, HARRISON, I, HOOPER, S. E, CHENG, T. S, FOXON, C. T, NOVIKOV, N
Published in Semiconductor science and technology (1998)
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Published in Semiconductor science and technology (1998)
Journal Article
GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine
Antipov, V.G., Guriev, A.I., Elyukhin, V.A., Faleev, N.N., Kudriavtsev, Yu.A., Lebedev, A.B., Shubina, T.V., Zubrilov, A.S., Nikishin, S.A., Temkin, H.
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
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Conference Proceeding
Studies of p-GaN grown by MBE on GaAs(1 1 1)B
FOXON, C. T, CHENG, T. S, JEFFS, N. J, DEWSNIP, J, FLANNERY, L, ORTON, J. W, HARRISON, I, NOVIKOV, S. V, BER, B. Ya, KUDRIAVTSEV, Yu. A
Published in Journal of crystal growth (1998)
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Published in Journal of crystal growth (1998)
Conference Proceeding