Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons
Kuboyama, S., Kamezawa, C., Satoh, Y., Hirao, T., Ohyama, H.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
A fabrication technique for paper-based analytical devices via two-sided patterning with thermal-transfer printer and laminator
Monju, Takuya, Hirakawa, Manabu, Kuboyama, Satoshi, Saiki, Rikuro, Ishida, Akihiko
Published in Sensors and actuators. B, Chemical (15.01.2023)
Published in Sensors and actuators. B, Chemical (15.01.2023)
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Journal Article
Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs
Mizuta, Eiichi, Kuboyama, Satoshi, Abe, Hiroshi, Iwata, Yoshiyuki, Tamura, Takashi
Published in IEEE transactions on nuclear science (01.08.2014)
Published in IEEE transactions on nuclear science (01.08.2014)
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Journal Article
Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array
Takeuchi, Kozo, Sakamoto, Toshitsugu, Tada, Munehiro, Takeyama, Akinori, Ohshima, Takeshi, Kuboyama, Satoshi, Shindou, Hiroyuki
Published in IEEE transactions on nuclear science (01.07.2019)
Published in IEEE transactions on nuclear science (01.07.2019)
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Journal Article
Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test
Kuboyama, Satoshi, Mizuta, Eiichi, Nakada, Yuki, Shindou, Hiroyuki
Published in IEEE transactions on nuclear science (01.07.2019)
Published in IEEE transactions on nuclear science (01.07.2019)
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Journal Article
Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions
Kuboyama, Satoshi, Mizuta, Eiichi, Nakada, Yuki, Shindou, Hiroyuki, Michez, Alain, Boch, Jerome, Saigne, Frederic, Touboul, Antoine
Published in IEEE transactions on nuclear science (01.07.2019)
Published in IEEE transactions on nuclear science (01.07.2019)
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Journal Article
Characteristic Charge Collection Mechanism Observed in FinFET SRAM Cells
Takeuchi, Kozo, Sakamoto, Keita, Yukumatsu, Kazuki, Watanabe, Kyota, Tsuchiya, Yuta, Kato, Takashi, Matsuyama, Hideya, Takeyama, Akinori, Ohshima, Takeshi, Kuboyama, Satoshi, Shindo, Hiroyuki
Published in IEEE transactions on nuclear science (01.08.2022)
Published in IEEE transactions on nuclear science (01.08.2022)
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Journal Article
Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications
Mizuta, E., Kuboyama, S., Nakada, Y., Takeyama, A., Ohshima, T., Iwata, Y., Suzuki, K.
Published in IEEE transactions on nuclear science (01.08.2018)
Published in IEEE transactions on nuclear science (01.08.2018)
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Journal Article
Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs
Kuboyama, S., Maru, A., Shindou, H., Ikeda, N., Hirao, T., Abe, H., Tamura, T.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs
Kuboyama, Satoshi, Ikeda, Naomi, Mizuta, Eiichi, Abe, Hiroshi, Hirao, Toshio, Tamura, Takashi
Published in IEEE transactions on nuclear science (01.08.2012)
Published in IEEE transactions on nuclear science (01.08.2012)
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Journal Article
광학 적층체
NAKAMURA HIROSHI, SHINOHARA SEIJI, KUBOYAMA SATOSHI, ONO YUKIHIRO, OSHIMA KENTARO, NOMURA TAKAHISA, HORIO TOMOYUKI, MATSUI KIYOTAKA, NAKASHIMA MASATAKA
Year of Publication 19.03.2019
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Year of Publication 19.03.2019
Patent
OPTICAL LAYERED BODY
HORIO, Tomoyuki, NOMURA, Takahisa, SHINOHARA, Seiji, NAKAMURA, Hiroshi, ONO, Yukihiro, OSHIMA, Kentaro, KUBOYAMA, Satoshi, NAKASHIMA, Masataka, MATSUI, Kiyotaka
Year of Publication 18.01.2018
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Year of Publication 18.01.2018
Patent
OPTICAL LAMINATE
SHINOHARA SEIJI, KUBOYAMA SATOSHI, ONO YUKIHIRO, NAKAMURA KEISHI, OSHIMA KENTARO, NOMURA TAKAHISA, HORIO TOMOYUKI, MATSUI KIYOTAKA, NAKAJIMA MASATAKA
Year of Publication 18.01.2018
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Year of Publication 18.01.2018
Patent
Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation
KAMIMURA, Hiroshi, YOSHIOKA, Shinichi, AKIYAMA, Masatsugu, NAKAMURA, Mitsuhiro, TAMURA, Takashi, KUBOYAMA, Satoshi
Published in Journal of nuclear science and technology (01.01.1994)
Published in Journal of nuclear science and technology (01.01.1994)
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Journal Article
Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation
Ikeda, N., Kuboyama, S., Satoh, Y., Tamura, T.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits
Makihara, A., Yokose, T., Tsuchiya, Y., Miyazaki, Y., Abe, H., Shindou, H., Ebihara, T., Maru, A., Morikawa, K., Kuboyama, S., Tamura, T.
Published in IEEE transactions on nuclear science (01.02.2013)
Published in IEEE transactions on nuclear science (01.02.2013)
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Journal Article