Search Results - "KRAFT JOCHEN" :: K.UTB vyhledávací portál

Semiconductor device with through-substrate via and method of producing a semiconductor device with through-substrate via

by HOLZHAIDER, RAINER, CARNIELLO, SARA, SCHRANK, FRANZ, ENICHLMAIR, HUBERT, KRAFT, JOCHEN, LÖFFLER, BERNHARD
Year of Publication 01.07.2015

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A method of producing a photodiode device and a photodiode device comprising an etch stop layer

by EILMSTEINER, GERHARD, TEVA, JORDI, JONAK-AUER, INGRID, KRAFT, JOCHEN
Year of Publication 06.02.2013

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Photodiode and production method

by KRAFT JOCHEN, JONAK-AUER INGRID, MINIXHOFER RAINER, TEVA JORDI, TRUPPE HERBERT
Year of Publication 28.04.2015

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Semiconductor device

by COPPETA, RAFFAELE, SCHRANK, FRANZ, KRAFT, JOCHEN, PARTEDER, GEORG, SINGULANI, ANDERSON
Year of Publication 01.09.2018

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Method of producing a semiconductor device with protruding contacts

by KRAFT JOCHEN, SCHREMS MARTIN, ROHRACHER KARL
Year of Publication 28.09.2016

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AUTOMATICALLY ADJUSTABLE TRANSISTOR AND THE PRODUCTION METHOD THEREOF

by JOCHEN KRAFT, HUBERT ENICHLMAIR
Year of Publication 13.05.2004

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Photodiode with a Reduced Dark Current and Method for the Production Thereof

by MEINHARDT GERALD, KRAFT JOCHEN, LOEFFLER BERNHARD
Year of Publication 18.02.2010

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Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact

by LÖFFLER BERNHARD, KRAFT JOCHEN, JESSENIG STEFAN, SIEGERT JÖRG, TEVA JORDI, KOPPITSCH GÜNTHER, SCHRANK FRANZ
Year of Publication 11.11.2014

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Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance

by KRAFT JOCHEN, ROEHRER GEORG, LOEFFLER BERNHARD
Year of Publication 08.12.2009

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Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance

by Kraft, Jochen, Loeffler, Bernhard, Roehrer, Georg
Year of Publication 08.12.2009

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PHOTODIODE AND PRODUCTION METHOD

by KRAFT JOCHEN, JONAK-AUER INGRID, MINIXHOFER RAINER, TEVA JORDI, TRUPPE HERBERT
Year of Publication 24.07.2014

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METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE COMPRISING A CONDUCTOR LAYER IN THE SEMICONDUCTOR BODY AND SEMICONDUCTOR BODY

by SCHREMS MARTIN, KRAFT JOCHEN, MINIXHOFER RAINER, STÜCKLER EWALD, TEVA JORDI, KOPPITSCH GÜNTHER
Year of Publication 10.07.2014

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Sensor chip stack and method of producing a sensor chip stack

by FITZI ANDREAS, PARTEDER GEORG, KRAFT JOCHEN, TROXLER THOMAS, SCHRANK FRANZ
Year of Publication 12.01.2018

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Method for Producing a Semiconductor Component, and Semiconductor Component

by CARNIELLO SARA, KRAFT JOCHEN, KOPPITSCH GUENTHER, SCHRANK FRANZ, BEUTL MICHAEL
Year of Publication 27.10.2011

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Light-Sensitive Component

by ROHRER GEORG, KRAFT JOCHEN, ENICHLMAIR HUBERT
Year of Publication 06.11.2008

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Photodiode mit verringertem Dunkelstrom, Verfahren zur Herstellung und ihre Verwendung

by LOEFFLER, BERNHARD, KRAFT, JOCHEN, MEINHARDT, GERALD
Year of Publication 16.10.2008

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Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Durchkontaktierung

by Kraft, Jochen, Dr, Löffler, Bernhard, Teva, Jordi, Koppitsch, Günther, Dr, Jessenig, Stefan, Schrank, Franz, Siegert, Jörg
Year of Publication 28.03.2019

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METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A THROUGH-CONTACT AND SEMICONDUCTOR COMPONENT WITH THROUGH-CONTACT

by KRAFT JOCHEN, JESSENIG STEFAN, KOPPITSCH GUENTHER, TEVA JORDI, SIEGERT JOERG, SCHRANK FRANZ, LOEFFLER BERNHARD
Year of Publication 29.08.2013

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PHOTODIODE WITH A REDUCED DARK CURRENT AND METHOD FOR THE PRODUCTION THEREOF

by LOEFFLER, BERNHARD, KRAFT, JOCHEN, MEINHARDT, GERALD
Year of Publication 27.02.2008

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Halbleiterbauelement mit Durchkontaktierung und Verfahren zu dessen Herstellung

by SCHRANK, FRANZ, KRAFT, JOCHEN
Year of Publication 12.08.2010

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