Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer
Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2011)
Published in Japanese Journal of Applied Physics (01.10.2011)
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Journal Article
Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer
Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2011)
Published in Japanese Journal of Applied Physics (01.10.2011)
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Journal Article
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
KAKUSHIM, K, KOYANAGI, T, TACHI, K, SONG, J, AHMET, P, TSUTSUI, K, SUGII, N, HATTORI, T, IWAI, H
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
Impact of Alkali-Earth-Elements Incorporation on V fb Roll-Off Characteristics of La 2 O 3 Gated MOS Device
Koyanagi, Tomotsune, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, T., Iwai, H.
Published in ECS transactions (01.10.2010)
Published in ECS transactions (01.10.2010)
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Journal Article
Selection of rare earth silicates for highly scaled gate dielectrics
Kakushima, K., Okamoto, K., Koyanagi, T., Kouda, M., Tachi, K., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
Published in Microelectronic engineering (01.10.2010)
Published in Microelectronic engineering (01.10.2010)
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Journal Article
Electrical Characterization of La 2 O 3 -Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
Koyanagi, Tomotsune, Tachi, Kiichi, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Hattori, Takeo, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.05.2009)
Published in Japanese Journal of Applied Physics (01.05.2009)
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Journal Article
Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La 2 O 3 Gated MOS Device
Koyanagi, Tomotsune, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in ECS transactions (25.09.2009)
Published in ECS transactions (25.09.2009)
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Journal Article
Effects of Metal Layer Insertion on EOT Scaling in TiN/Metal/La 2 O 3 /Si High-k Gate Stacks
Ahmet, Parhat, Kitayama, Daisuke, Kaneda, Tasuku, Suzuki, Takuya, Koyanagi, Tomotsune, Kouda, Miyuki, Mamatrishat, Maimaiti, Kawanago, Takamasa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in ECS transactions (25.04.2011)
Published in ECS transactions (25.04.2011)
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Journal Article
TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT
Kitayama, Daisuke, Koyanagi, Tomotsune, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, T., Iwai, H.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT
Kitayama, Daisuke, Koyanagi, Tomotsune, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, T., Iwai, H.
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
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Journal Article
Impact of Alkali Earth Elements Incorporation on V fb Roll-Off Characteristics of La 2 O 3 Gated MOS Device
Koyanagi, Tomotsune, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, T., Iwai, H.
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
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Journal Article
Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La 2 O 3 Gated MOS Device
Koyanagi, Tomotsune, Okamoto, Kouichi, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Published in Meeting abstracts (Electrochemical Society) (10.07.2009)
Published in Meeting abstracts (Electrochemical Society) (10.07.2009)
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Journal Article