Resistance Controllability of \hbox \hbox/\hbox Stack ReRAM for Low-Voltage and Multilevel Operation
Terai, M., Sakotsubo, Y., Kotsuji, S., Hada, H.
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
Get full text
Journal Article
Trapped-Hole-Enhanced Erase-Level Shift by FN-Stress Disturb in Sub-90-nm-Node Embedded SONOS Memory
Terai, M., Tsuji, Y., Kotsuji, S., Fujieda, S., Ando, K.
Published in IEEE transactions on electron devices (01.06.2008)
Published in IEEE transactions on electron devices (01.06.2008)
Get full text
Journal Article
A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage
Sakotsubo, Y, Terai, M, Kotsuji, S, Saito, Y, Tada, M, Yabe, Y, Hada, H
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Get full text
Conference Proceeding
Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic
Tada, M., Sakamoto, T., Tsuji, Y., Banno, N., Saito, Y., Yabe, Y., Ishida, S., Terai, M., Kotsuji, S., Iguchi, N., Aono, M., Hada, H., Kasai, N.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding
Impact of Crystalline Phase of Ni-FUSI Gate Electrode on Bias Temperature Instability and Gate Dielectric Breakdown of HfSiON MOSFETs
Terai, M., Onizawa, T., Kotsuji, S., Ikarashi, N., Toda, A., Fujieda, S., Watanabe, H.
Published in IEEE transactions on electron devices (01.03.2007)
Published in IEEE transactions on electron devices (01.03.2007)
Get full text
Journal Article
Effect of ReRAM-stack asymmetry on read disturb immunity
Terai, M., Kotsuji, S., Hada, H., Iguchi, N., Ichihashi, T., Fujieda, S.
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Get full text
Conference Proceeding
Effect of bottom electrode of ReRAM with Ta2O5/TiO2 stack on RTN and retention
Terai, M., Sakotsubo, Y., Saito, Y., Kotsuji, S., Hada, H.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding
Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention
Sunamura, H., Ikarashi, T., Morioka, A., Kotsuji, S., Oshida, M., Ikarashi, N., Fujieda, S., Watanabe, H.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
Get full text
Conference Proceeding
Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation
Sunamura, H., Masuzaki, K., Terai, M., Kotsuji, S., Onizawa, T., Morioka, A., Ikarashi, T., Ikarashi, N., Fujieda, S., Watanabe, H.
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Get full text
Conference Proceeding