In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS
Miyoshi, Hidenori, Ueno, Tetsuji, Akiyama, Koji, Hirota, Yoshihiro, Kaitsuka, Takanobu
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Artificial insemination with canine spermatozoa frozen in a skim milk/glucose-based extender
Abe, Y.(Obihiro Univ. of Agriculture and Veterinary Medicine, Hokkaido (Japan)), Lee, D.S, Sano, H, Akiyama, K, Yanagimoto Ueta, Y, Asano, T, Suwa, Y, Suzuki, H
Published in Journal of Reproduction and Development (01.08.2008)
Published in Journal of Reproduction and Development (01.08.2008)
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Journal Article
Analysis of Dielectric Prebreakdown of High-k Stacking Polycrystalline MIM by Stochastic Trap-Clusters Growing and Percolation-Based Transportation
Lin, Hsin-Jyun, Tamura, Chihiro, Akiyama, Koji, Nakamura, Genji, Nagai, Hiroyuki, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Journal Article
Experimental Study of 1/f 1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Experimental Study of 1/f1+α Noise in Transient Leakage Current of Metal-Insulator-Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Image Position Correction against Vertical Vibration of Vehicles for Augmented Reality on Head-up Display
Hasegawa, Takefumi, Sumiyoshi, Yuki, Ota, Shuhei, Hayashi, Yayoi, Nishikawa, Ayumi, Chikuri, Takayoshi, Akiyama, Koji, Okato, Yohei
Published in Eizō Jōhō Media Gakkaishi (2020)
Published in Eizō Jōhō Media Gakkaishi (2020)
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Journal Article
Effect of Plasma Process for SiO2 Film on Sidewall
Tanimura, Tatsuhiko, Hsiao, Chihhsiang, Akiyama, Koji, Hirota, Yoshihiro, Sato, Jun, Kaitsuka, Takanobu
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
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Journal Article
Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor
Wang, Wenwu, Akiyama, Koji, Mizubayashi, Wataru, Nabatame, Toshihide, Ota, Hiroyuki, Toriumi, Akira
Published in Journal of applied physics (15.03.2009)
Published in Journal of applied physics (15.03.2009)
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Journal Article
Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering
Ota, H., Hirano, A., Watanabe, Y., Yasuda, N., Iwamoto, K., Akiyama, K., Okada, K., Migita, S., Nabatame, T., Toriumi, A.
Published in 2007 IEEE International Electron Devices Meeting (01.01.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.01.2007)
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Conference Proceeding
Hydrogenated amorphous silicon carbide photoreceptor for photoaddressed spatial light modulator
AKIAYAMA, K, TAKIMOTO, A, OGIWARA, A, OGAWA, H
Published in Japanese Journal of Applied Physics (1993)
Published in Japanese Journal of Applied Physics (1993)
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Conference Proceeding
Journal Article
3-D topology optimization of single-pole-type head by using design sensitivity analysis
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Journal Article
Conference Proceeding
Effect of Al-diffusion-induced positive flatband voltage shifton the electrical characteristics of Al-incorporated high- k metal-oxide-semiconductor field-effective transistor
Wang, Wenwu, Akiyama, Koji, Mizubayashi, Wataru, Nabatame, Toshihide, Ota, Hiroyuki, Toriumi, Akira
Published in Journal of applied physics (26.03.2009)
Published in Journal of applied physics (26.03.2009)
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