Epitaxial GeSn: impact of process conditions on material quality
Loo, Roger, Shimura, Yosuke, Ike, Shinichi, Vohra, Anurag, Stoica, Toma, Stange, Daniela, Buca, Dan, Kohen, David, Margetis, Joe, Tolle, John
Published in Semiconductor science and technology (16.10.2018)
Published in Semiconductor science and technology (16.10.2018)
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Journal Article
Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Margetis, Joe, Kohen, David, Tolle, John, Tan, Chuan Seng
Published in IEEE photonics journal (01.06.2022)
Published in IEEE photonics journal (01.06.2022)
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Journal Article
Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology
Kohen, David, Cayron, Cyril, De Vito, Eric, Tileli, Vasiliki, Faucherand, Pascal, Morin, Christine, Brioude, Arnaud, Perraud, Simon
Published in Journal of crystal growth (15.02.2012)
Published in Journal of crystal growth (15.02.2012)
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Journal Article
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate
Kohen, David, Bao, Shuyu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A.
Published in Journal of crystal growth (01.07.2015)
Published in Journal of crystal growth (01.07.2015)
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Journal Article
(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
Porret, Clement, Hikavyy, Andriy Yakovitch, Gomez Granados, Juan Fernando, Baudot, Sylvain, Vohra, Anurag, Kunert, Bernardette, Douhard, Bastien, Bogdanowicz, Janusz, Schaekers, Marc, Kohen, David, Margetis, Joe, Tolle, John, Lima, Lucas, Sammak, Amir, Scappucci, Giordano, Rosseel, Erik, Langer, Robert, Loo, Roger
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article
Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Kohen, David, Nguyen, Xuan Sang, Yadav, Sachin, Kumar, Annie, Made, Riko I, Heidelberger, Christopher, Gong, Xiao, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yeo, Yee Chia, Yoon, Soon Fatt, Fitzgerald, Eugene A.
Published in AIP advances (01.08.2016)
Published in AIP advances (01.08.2016)
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Journal Article
Electrical Properties of III-V/Oxide Interfaces
Brammertz, Guy, Lin, H.C., Martens, Koen, Alian, Ali-Reza, Merckling, C., Penaud, Julien, Kohen, David, Wang, W.-E, Sioncke, S., Delabie, A., Meuris, Marc, Caymax, Matty R., Heyns, Marc
Published in ECS transactions (15.05.2009)
Published in ECS transactions (15.05.2009)
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Journal Article
Cu2ZnSn(S1−xSex)4 based solar cell produced by selenization of vacuum deposited precursors
Grenet, Louis, Bernardi, Sergio, Kohen, David, Lepoittevin, Christophe, Noël, Sébastien, Karst, Nicolas, Brioude, Arnaud, Perraud, Simon, Mariette, Henri
Published in Solar energy materials and solar cells (01.06.2012)
Published in Solar energy materials and solar cells (01.06.2012)
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Journal Article
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John
Published in Journal of crystal growth (01.02.2018)
Published in Journal of crystal growth (01.02.2018)
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Journal Article
Monolithic integration of III-V HEMT and Si-CMOS through TSV-less 3D wafer stacking
Kwang Hong Lee, Shuyu Bao, Kohen, David, Chieh Chih Huang, Lee, Kenneth Eng Kian, Fitzgerald, Eugene, Chuan Seng Tan
Published in 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) (01.05.2015)
Published in 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) (01.05.2015)
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Conference Proceeding
Enhanced B doping in CVD-grown GeSn:B using B d-doping layers
Kohen, David, Vohra, Anurag, Loo, Roger, Vandervorst, Wilfried, Bhargava, Nupur, Margetis, Joe, Tolle, John
Published in Journal of crystal growth (01.02.2018)
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Published in Journal of crystal growth (01.02.2018)
Journal Article
Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Kohen, David, Nguyen, Xuan Sang, Made, Riko I., Heidelberger, Christopher, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Fitzgerald, Eugene A.
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
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Journal Article