Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Maeda, Ryota, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
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Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Maeda, Ryota, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
Published in Physica status solidi. A, Applications and materials science (01.11.2024)
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Journal Article
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Published in Dalton transactions : an international journal of inorganic chemistry (08.12.2020)
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Published in Dalton transactions : an international journal of inorganic chemistry (14.03.2017)
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AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering
Maeda, Ryota, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi
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Published in Applied physics express (01.03.2022)
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