Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection
Würtele, M.A., Kolbe, T., Lipsz, M., Külberg, A., Weyers, M., Kneissl, M., Jekel, M.
Published in Water research (Oxford) (01.01.2011)
Published in Water research (Oxford) (01.01.2011)
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Journal Article
High quality AlGaN grown on ELO AlN/sapphire templates
Zeimer, U., Kueller, V., Knauer, A., Mogilatenko, A., Weyers, M., Kneissl, M.
Published in Journal of crystal growth (15.08.2013)
Published in Journal of crystal growth (15.08.2013)
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Journal Article
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
Glaab, J., Ruschel, J., Kolbe, T., Knauer, A., Rass, J., Cho, H. K., Ploch, N. Lobo, Kreutzmann, S., Einfeldt, S., Weyers, M., Kneissl, M.
Published in IEEE photonics technology letters (01.04.2019)
Published in IEEE photonics technology letters (01.04.2019)
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Journal Article
Advances in group III-nitride-based deep UV light-emitting diode technology
Kneissl, M, Kolbe, T, Chua, C, Kueller, V, Lobo, N, Stellmach, J, Knauer, A, Rodriguez, H, Einfeldt, S, Yang, Z, Johnson, N M, Weyers, M
Published in Semiconductor science and technology (01.01.2011)
Published in Semiconductor science and technology (01.01.2011)
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Journal Article
The critical thickness of InGaN on (0 0 0 1)GaN
Leyer, M., Stellmach, J., Meissner, Ch, Pristovsek, M., Kneissl, M.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
Cho, H K, Mogilatenko, A, Susilo, N, Ostermay, I, Seifert, S, Wernicke, T, Kneissl, M, Einfeldt, S
Published in Semiconductor science and technology (01.10.2022)
Published in Semiconductor science and technology (01.10.2022)
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Journal Article
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
Cho, H K, Krüger, O, Külberg, A, Rass, J, Zeimer, U, Kolbe, T, Knauer, A, Einfeldt, S, Weyers, M, Kneissl, M
Published in Semiconductor science and technology (03.11.2017)
Published in Semiconductor science and technology (03.11.2017)
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Journal Article
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
Kueller, V., Knauer, A., Zeimer, U., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (01.04.2013)
Published in Journal of crystal growth (01.04.2013)
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Journal Article
Low resistance n-contact for UVC LEDs by a two-step plasma etching process
Cho, H K, Kang, J H, Sulmoni, L, Kunkel, K, Rass, J, Susilo, N, Wernicke, T, Einfeldt, S, Kneissl, M
Published in Semiconductor science and technology (01.09.2020)
Published in Semiconductor science and technology (01.09.2020)
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Journal Article
Growth of AlGaN and AlN on patterned AlN/sapphire templates
Kueller, V., Knauer, A., Brunner, F., Zeimer, U., Rodriguez, H., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
V-pit to truncated pyramid transition in AlGaN-based heterostructures
Mogilatenko, A, Enslin, J, Knauer, A, Mehnke, F, Bellmann, K, Wernicke, T, Weyers, M, Kneissl, M
Published in Semiconductor science and technology (15.10.2015)
Published in Semiconductor science and technology (15.10.2015)
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Journal Article
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
Lobo Ploch, N., Rodriguez, H., Stolmacker, C., Hoppe, M., Lapeyrade, M., Stellmach, J., Mehnke, F., Wernicke, T., Knauer, A., Kueller, V., Weyers, M., Einfeldt, S., Kneissl, M.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (01.02.2020)
Published in Journal of crystal growth (01.02.2020)
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Journal Article
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
Schade, L., Schwarz, U. T., Wernicke, T., Weyers, M., Kneissl, M.
Published in Physica Status Solidi (b) (01.03.2011)
Published in Physica Status Solidi (b) (01.03.2011)
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Journal Article
Effect of the AIN nucleation layer growth on AlN material quality
Reentilä, O., Brunner, F., Knauer, A., Mogilatenko, A., Neumann, W., Protzmann, H., Heuken, M., Kneissl, M., Weyers, M., Tränkle, G.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire
Stellmach, J., Frentrup, M., Mehnke, F., Pristovsek, M., Wernicke, T., Kneissl, M.
Published in Journal of crystal growth (15.09.2012)
Published in Journal of crystal growth (15.09.2012)
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Journal Article
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
Mogilatenko, A., Kirmse, H., Stellmach, J., Frentrup, M., Mehnke, F., Wernicke, T., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (15.08.2014)
Published in Journal of crystal growth (15.08.2014)
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Journal Article
Mechanical properties and tribological performance of polyoxymethylene/short cellulose fiber composites
Kneissl, Lucas M., Gonçalves, Gil, Joffe, Roberts, Kalin, Mitjan, Emami, Nazanin
Published in Polymer testing (01.11.2023)
Published in Polymer testing (01.11.2023)
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