3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
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Journal Article
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
Imanishi, Shoichiro, Kudara, Ken, Ishiwata, Hitoshi, Horikawa, Kiyotaka, Amano, Shotaro, Iwataki, Masayuki, Morishita, Aoi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2021)
Published in IEEE electron device letters (01.02.2021)
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Journal Article
Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure
Tsunoda, Jun, Iwataki, Masayuki, Horikawa, Kiyotaka, Amano, Shotaro, Ota, Kosuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE transactions on electron devices (01.07.2021)
Published in IEEE transactions on electron devices (01.07.2021)
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Journal Article
3.8 W/mm RF Power Density for ALD Al 2 O 3 -Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
Get full text
Journal Article
Over 12000 A/cm 2 and 3.2 m$\Omega$ cm 2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
Get full text
Journal Article
Over 12000 A/cm2 and 3.2 m \Omega cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
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Journal Article
Over 12000 A/cm2 and 3.2 m[Formula Omitted]cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.01.2020)
Published in IEEE electron device letters (01.01.2020)
Get full text
Journal Article