Synthesis of Poly[N-(1-adamantyl)vinylsulfonamide-c o- 2-(2-methyl)adamantyl methacrylate] for 193 nm Lithography
Fukuhara, Toshiaki, Shibasaki, Yuji, Ando, Shinji, Kishimura, Shinji, Endo, Masayuki, Sasago, Masaru, Ueda, Mitsuru
Published in Macromolecules (19.04.2005)
Published in Macromolecules (19.04.2005)
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Journal Article
Dissolution Characteristics of Acidic Groups for 157-nm Resist
Kishimura, Shinji, Endo, Masayuki, Sasago, Masaru
Published in Journal of Photopolymer Science and Technology (01.01.2002)
Published in Journal of Photopolymer Science and Technology (01.01.2002)
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Journal Article
Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
Kishimura, Shinji, Katsuyama, Akiko, Sasago, Masaru, Shirai, Masamitsu, Tsunooka, Masahiro
Published in Japanese Journal of Applied Physics (01.12.1999)
Published in Japanese Journal of Applied Physics (01.12.1999)
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Journal Article
Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
Yamaguchi, Atsuko, Takahashi, Makoto, Kishimura, Shinji, Matsuzawa, Nobuyuki, Ohfuji, Takeshi, Tanaka, Tomoaki, Tagawa, Seiichi, Sasago, Masaru
Published in Japanese Journal of Applied Physics (01.07.1999)
Published in Japanese Journal of Applied Physics (01.07.1999)
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Journal Article
Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography:(1) Synthesis, Properties and Photochemistry
Shirai, Masamitsu, Kataoka, Atsuko, Shinozuka, Toyofumi, Tsunooka, Masahiro, Kishimura, Shinji, Sasago, Masaru
Published in Journal of Photopolymer Science and Technology (2000)
Published in Journal of Photopolymer Science and Technology (2000)
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Journal Article
Poly (α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography: (2) F2 Excimer Laser Exposure Characteristics
Kishimura, Shinji, Sasago, Masaru, Shirai, Masamitsu, Kataoka, Atsuko, Shinozuka, Toyofumi, Tsunooka, Masahiro
Published in Journal of Photopolymer Science and Technology (2000)
Published in Journal of Photopolymer Science and Technology (2000)
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Journal Article
RELATIONSHIP BETWEEN PATTERNING AND DISSOLUTION CHARACTARISTICS OF CHEMICAL AMPLIFICATION RESISTS USING PARTLY PROTECTED POLY(p-VINYLPHENOL)
KUMADA, TERUHIKO, KUBOTA, SHIGERU, KOEZUKA, HIROSHI, HANAWA, TETURO, KISHIMURA, SHINJI, NAGATA, HITOSHI
Published in Journal of Photopolymer Science and Technology (1991)
Published in Journal of Photopolymer Science and Technology (1991)
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Journal Article
Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect
Kishimura, Shinji, Yamaguchi, Atsumi, Nagata, Hitoshi
Published in Japanese Journal of Applied Physics (01.10.1989)
Published in Japanese Journal of Applied Physics (01.10.1989)
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Journal Article
Effect of anion in developer on dissolution characteristics of photoresist
YAMAGUCHI, A, KISHIMURA, S, YAMADA, Y, NAGATA, H
Published in Japanese Journal of Applied Physics (1991)
Published in Japanese Journal of Applied Physics (1991)
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Journal Article
New Photoresist Materials for 157-nm Lithography. Poly[Vinylsulfonyl Fluoride-c o-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] Partially Protected with tert-Butoxycarbonyl
Fujigaya, Tsuyohiko, Sibasaki, Yuji, Ando, Shinji, Kishimura, Shinji, Endo, Masayoshi, Sasago, Masaru, Ueda, Mitsuru
Published in Chemistry of materials (08.04.2003)
Published in Chemistry of materials (08.04.2003)
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