Bulk and epitaxial growth of silicon carbide
Kimoto, Tsunenobu
Published in Progress in crystal growth and characterization of materials (01.06.2016)
Published in Progress in crystal growth and characterization of materials (01.06.2016)
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Journal Article
Origin of hole mobility anisotropy in 4H-SiC
Ishikawa, Ryoya, Tanaka, Hajime, Kaneko, Mitsuaki, Kimoto, Tsunenobu
Published in Journal of applied physics (21.02.2024)
Published in Journal of applied physics (21.02.2024)
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Journal Article
High electron mobility in heavily sulfur-doped 4H-SiC
Kaneko, Mitsuaki, Matsuoka, Taiga, Kimoto, Tsunenobu
Published in Journal of applied physics (28.05.2024)
Published in Journal of applied physics (28.05.2024)
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Journal Article
Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
Niwa, Hiroki, Suda, Jun, Kimoto, Tsunenobu
Published in IEEE transactions on electron devices (01.10.2015)
Published in IEEE transactions on electron devices (01.10.2015)
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Journal Article
Generation of deep levels near the 4H-SiC surface by thermal oxidation
Fujii, Haruki, Kaneko, Mitsuaki, Kimoto, Tsunenobu
Published in Applied physics express (01.04.2024)
Published in Applied physics express (01.04.2024)
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Journal Article
Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC
Hara, Masahiro, Kaneko, Mitsuaki, Kimoto, Tsunenobu
Published in Applied physics express (01.02.2023)
Published in Applied physics express (01.02.2023)
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Journal Article
Estimation of Threshold Voltage in SiC Short-Channel MOSFETs
Tachiki, Keita, Ono, Takahisa, Kobayashi, Takuma, Tanaka, Hajime, Kimoto, Tsunenobu
Published in IEEE transactions on electron devices (01.07.2018)
Published in IEEE transactions on electron devices (01.07.2018)
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Journal Article
Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces
Hara, Masahiro, Asada, Satoshi, Maeda, Takuya, Kimoto, Tsunenobu
Published in Applied physics express (01.04.2020)
Published in Applied physics express (01.04.2020)
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Journal Article