4H-SiC MISFETs with nitrogen-containing insulators
Noborio, Masato, Suda, Jun, Beljakowa, Svetlana, Krieger, Michael, Kimoto, Tsunenobu
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
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Journal Article
Impact of post-nitridation annealing in CO 2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
Hosoi, Takuji, Ohsako, Momoe, Moges, Kidist, Ito, Koji, Kimoto, Tsunenobu, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.06.2022)
Published in Applied physics express (01.06.2022)
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Journal Article
Effects of surface defects on the performance of 4H– and 6H–SiC pn junction diodes
Kimoto, Tsunenobu, Miyamoto, Nao, Matsunami, Hiroyuki
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Fundamentals, Commercialization, and Future Challenges of SiC Power Devices
Kimoto, Tsunenobu
Published in 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (16.11.2023)
Published in 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (16.11.2023)
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Conference Proceeding
Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing
Okuda, Takafumi, Kobayashi, Takuma, Kimoto, Tsunenobu, Suda, Jun
Published in Applied physics express (01.05.2016)
Published in Applied physics express (01.05.2016)
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Journal Article
Design and formation of SiC (0001)/SiO 2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
Kobayashi, Takuma, Okuda, Takafumi, Tachiki, Keita, Ito, Koji, Matsushita, Yu-ichiro, Kimoto, Tsunenobu
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
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Journal Article