Search Results - "KIM HYO UK" :: K.UTB vyhledávací portál

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The effect of He or Ar/O2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2

by KIM, Hyo-Uk, YI, Chung, RHEE, Shi-Woo
Published in Journal of materials science. Materials in electronics (2004)

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Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition

by Kim, Hyo-uk, Rhee, Shi-woo
Published in Journal of materials science. Materials in electronics (01.11.2000)

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METHOD OF FABRICATING COLOR FILTER ON TFT TYPE ARRAY SUBSTRATE FOR IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE

by JUNG, HAN GYU, KIM, HYO UK
Year of Publication 03.07.2009

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The substrate for LCD and method for fabricating of the same

by LIM, BYOUNG HO, KIM, HYO UK
Year of Publication 15.11.2007

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Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using N2/He or O2/He gas

by Yi, Chung, Kim, Hyo Uk, Rhee, Shi Woo
Published in Thin solid films (03.04.2002)

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array panel of liquid crystal display and manufacturing method thereof

by KIM, HWAN, PARK, GI CHUN, KIM, HYO UK, YANG, CHANG GUK
Year of Publication 07.07.2003

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Fabrication method for TFT

by KIM, HWAN, PARK, GI CHUN, KIM, HYO UK, YANG, CHANG GUK
Year of Publication 04.07.2003

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METHOD FOR ETCHING COPPER THIN FILM

by KANG, SANG U, KIM, HYO UK, LEE, SI U
Year of Publication 15.02.2000

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Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate-ozone chemical vapor deposition

by KIM, H.-U, RHEE, S.-W
Published in Journal of the Electrochemical Society (01.04.2000)

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Improvement of the SiO sub(2)/Si interface characteristics by two-step deposition with intermediate plasma treatment using N sub(2)/He or O sub(2)/He gas

by Yi, Chung, Kim, Hyo Uk, Rhee, Shi Woo
Published in Thin solid films (03.04.2002)

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Electrical Properties of Bulk Silicon Dioxide and SiO[sub 2]/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition

by Kim, Hyo-Uk, Rhee, Shi-Woo
Published in Journal of the Electrochemical Society (2000)

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Improvement of the SiO 2/Si interface characteristics by two-step deposition with intermediate plasma treatment using N 2/He or O 2/He gas

by Yi, Chung, Kim, Hyo Uk, Rhee, Shi Woo
Published in Thin solid films (2002)

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Journal Article

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The effect of He or Ar/O sub(2) plasma treatment on Si surface prior to chemical vapor deposition of SiO sub(2)

by Kim, Hyo-Uk, Yi, Chung, Rhee, Shi-Woo
Published in Journal of materials science. Materials in electronics (01.01.2004)

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Journal Article

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The effect of He or Ar/O[2 plasma treatment on Si surface prior to chemical vapor deposition of SiO[2

by Kim, Hyo-Uk, Yi, Chung, Rhee, Shi-Woo
Published in Journal of materials science. Materials in electronics (01.01.2004)

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Characterization of Deposition Process, Microstructure and Interfacial States of Silicon Dioxide Film Using Tetraethylorthosilicate/O[sub 2] with Various Dilution Gases

by Yi, Chung, Kim, Hyo Uk, Rhee, Shi Woo
Published in Journal of the Electrochemical Society (2001)

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Electrical properties of bulk silicon dioxide and SiO sub(2)/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition

by Kim, Hyo-Uk, Rhee, Shi-Woo
Published in Journal of materials science. Materials in electronics (01.11.2000)

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Journal Article

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Method of fabricating liquid crystal display device

by KIM HYO-UK
Year of Publication 07.10.2014

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Patent

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ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

by KIM, HYO UK
Year of Publication 07.05.2009

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THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

by KIM, HYO UK
Year of Publication 06.05.2009

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Flüssigkristallanzeigevorrichtung und Herstellungsverfahren

by Lim, Byoung-Ho, Kim, Hyo-Uk
Year of Publication 10.08.2017

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Patent

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