Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures
Kim, Jihoon, Venkatesan, A, Kim, Hanul, Kim, Yewon, Whang, Dongmok, Kim, Gil-Ho
Published in Advanced science (01.06.2021)
Published in Advanced science (01.06.2021)
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Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter
Lee, In-Yeal, Park, Hyung-Youl, Park, Jin-Hyung, Lee, Jinyeong, Jung, Woo-Shik, Yu, Hyun-Yong, Kim, Sang-Woo, Kim, Gil-Ho, Park, Jin-Hong
Published in Organic electronics (01.06.2013)
Published in Organic electronics (01.06.2013)
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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping
Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P
Published in ACS omega (28.02.2019)
Published in ACS omega (28.02.2019)
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Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer
Watanabe, K., Taniguchi, T., Liang, Chi-Te, Aoki, Nobuyuki, Lin, L.-H., Kim, Gil-Ho, Wu, Bi-Yi, Liu, C.-W., Matsunaga, M., Matsumoto, N., Mineharu, M., Chuang, Chiashain, Ochiai, Yuichi
Published in Journal of nanomaterials (01.01.2018)
Published in Journal of nanomaterials (01.01.2018)
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Journal Article
Enhanced Performance of WS 2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts
Phan, Nhat Anh Nguyen, Noh, Hamin, Kim, Jihoon, Kim, Yewon, Kim, Hanul, Whang, Dongmok, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2022)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2022)
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Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p‑n Homojunction Formed by Contact Engineering
Le Thi, Hai Yen, Ngo, Tien Dat, Phan, Nhat Anh Nguyen, Shin, Hoseong, Uddin, Inayat, Venkatesan, A., Liang, Chi-Te, Aoki, Nobuyuki, Yoo, Won Jong, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in ACS applied materials & interfaces (26.07.2023)
Published in ACS applied materials & interfaces (26.07.2023)
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Journal Article
High mobility field-effect transistors based on MoS2crystals grown by the flux method
Patil, Vilas, Kim, Jihyun, Agrawal, Khushabu, Park, Tuson, Yi, Junsin, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in Nanotechnology (06.08.2021)
Published in Nanotechnology (06.08.2021)
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Journal Article
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Li, Lijun, Khan, Muhammad Atif, Lim, Dongsuk, Lee, Yoontae, Park, Jinwoo, Yun, Sun Jin, Youn, Doo-Hyeb, Jun, Chungsam, Kim, Gil-Ho
Published in Nanoscale (28.01.2017)
Published in Nanoscale (28.01.2017)
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Journal Article
High mobility field-effect transistors based on MoS2 crystals grown by the flux method
Patil, Vilas, Kim, Jihyun, Agrawal, Khushabu, Park, Tuson, Yi, Junsin, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in Nanotechnology (17.05.2021)
Published in Nanotechnology (17.05.2021)
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Journal Article
Few-layer PdSe2-based field-effect transistor for photodetector applications
Venkatesan, A., Rathi, Servin, Kim, Yunseob, Kim, Hanul, Whang, Dongmok, Yun, Sun Jin, Kim, Gil-Ho
Published in Materials science in semiconductor processing (15.08.2020)
Published in Materials science in semiconductor processing (15.08.2020)
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Journal Article
Signature of Spin-Resolved Quantum Point Contact in p‑Type Trilayer WSe2 van der Waals Heterostructure
Sakanashi, Kohei, Krüger, Peter, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho, Ferry, David K, Bird, Jonathan P, Aoki, Nobuyuki
Published in Nano letters (22.09.2021)
Published in Nano letters (22.09.2021)
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Journal Article
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
Khan, Muhammad Atif, Rathi, Servin, Lim, Dongsuk, Yun, Sun Jin, Youn, Doo-Hyeb, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in Chemistry of materials (13.02.2018)
Published in Chemistry of materials (13.02.2018)
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Journal Article
Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate
Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho, Aoki, Nobuyuki, Ochiai, Yuichi, Watanabe, Kenji, Taniguchi, Takashi
Published in Nanotechnology (24.07.2015)
Published in Nanotechnology (24.07.2015)
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Journal Article
High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts
Khan, Muhammad Atif, Rathi, Servin, Lee, Changhee, Kim, Yunseob, Kim, Hanul, Whang, Dongmok, Yun, Sun Jin, Youn, Doo-Hyeb, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho
Published in Nanotechnology (28.09.2018)
Published in Nanotechnology (28.09.2018)
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Journal Article
On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers
Liang, Chi-Te, Lin, Li-Hung, Kuang Yoa, Chen, Lo, Shun-Tsung, Wang, Yi-Ting, Lou, Dong-Sheng, Kim, Gil-Ho, Yuan-Huei, Chang, Ochiai, Yuichi, Aoki, Nobuyuki, Chen, Jeng-Chung, Lin, Yiping, Chun-Feng, Huang, Lin, Sheng-Di, Ritchie, David A
Published in Nanoscale research letters (11.02.2011)
Published in Nanoscale research letters (11.02.2011)
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Journal Article
Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets
Chuang, Chiashain, Mineharu, Masaaki, Matsunaga, Masahiro, Liu, Chieh-Wen, Wu, Bi-Yi, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Liang, Chi-Te, Aoki, Nobuyuki
Published in Carbon (New York) (01.12.2019)
Published in Carbon (New York) (01.12.2019)
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