Search Results - "KIM, Janghyuk" :: K.UTB vyhledávací portál

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

by Kim, Janghyuk, Mastro, Michael A, Tadjer, Marko J, Kim, Jihyun
Published in ACS applied materials & interfaces (05.09.2018)

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An in-plane WSe2 p–n homojunction two-dimensional diode by laser-induced doping

by Yang, Sujeong, Lee, Geonyeop, Kim, Janghyuk, Yang, Seunghoon, Chul-Ho, Lee, Kim, Jihyun
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2020)

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Monolithically Integrated Enhancement-Mode and Depletion-Mode β‑Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications

by Kim, Janghyuk, Kim, Jihyun
Published in ACS applied materials & interfaces (12.02.2020)

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Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga 2 O 3 MESFETs with Graphene-Gate Architectures and Their Logic Applications

by Kim, Janghyuk, Kim, Jihyun
Published in ACS applied materials & interfaces (12.02.2020)

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Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

by Kim, Janghyuk, Oh, Sooyeoun, Mastro, Michael A, Kim, Jihyun
Published in Physical chemistry chemical physics : PCCP (21.06.2016)

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Ambipolar Charge Transport in Two-Dimensional WS2 Metal–Insulator–Semiconductor and Metal–Insulator–Semiconductor Field-Effect Transistors

by Lee, Geonyeop, Oh, Sooyeoun, Kim, Janghyuk, Kim, Jihyun
Published in ACS applied materials & interfaces (20.05.2020)

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Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

by Kim, Janghyuk, Mastro, Michael A, Tadjer, Marko J, Kim, Jihyun
Published in ACS applied materials & interfaces (28.06.2017)

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Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

by Oh, Sooyeoun, Kim, Janghyuk, Ren, Fan, Pearton, Stephen J., Kim, Jihyun
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (2016)

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Ambipolar Charge Transport in Two-Dimensional WS 2 Metal-Insulator-Semiconductor and Metal-Insulator-Semiconductor Field-Effect Transistors

by Lee, Geonyeop, Oh, Sooyeoun, Kim, Janghyuk, Kim, Jihyun
Published in ACS applied materials & interfaces (20.05.2020)

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Tuning the Threshold Voltage of Exfoliated β-Ga2O3 Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4 Wet Etching

by Son, Jongha, Kwon, Yongbeom, Kim, Janghyuk, Kim, Jihyun
Published in ECS journal of solid state science and technology (31.07.2018)

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BEOL-compatible synthesis of multi-layer graphene by carbon ion implantation on cobalt thin films

by Kim, Janghyuk, Kim, Hong-Yeol, Lee, Dongryul, An, Sungjoo, Kim, Jihyun
Published in Applied surface science (15.09.2020)

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

by Kim, Janghyuk, Tadjer, Marko J, Mastro, Michael A, Kim, Jihyun
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (2019)

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Study on the formation of graphene by ion implantation on Cu, Ni and CuNi alloy

by Kim, Janghyuk, Kim, Hong-Yeol, Jeon, Jeong Heum, An, Sungjoo, Hong, Jongwon, Kim, Jihyun
Published in Applied surface science (01.09.2018)

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Exfoliated beta -Ga sub(2)O sub(3) nano-belt field-effect transistors for air-stable high power and high temperature electronics

by Kim, Janghyuk, Oh, Sooyeoun, Mastro, Michael A, Kim, Jihyun
Published in Physical chemistry chemical physics : PCCP (01.06.2016)

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Surface nanotopography and cell shape modulate tumor cell susceptibility to NK cell cytotoxicity

by Cho, Yongbum, Kim, JangHyuk, Park, Jeehun, Doh, Junsang
Published in Materials horizons (02.10.2023)

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Heterostructure WSe 2 -Ga 2 O 3 junction field-effect transistor for low-dimensional high-power electronics

by Kim, Janghyuk, Mastro, Michael A, Tadjer, Marko J, Kim, Jihyun
Published in ACS applied materials & interfaces (05.09.2018)

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Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

by Kim, Janghyuk, Oh, Sooyeoun, Mastro, Michael A., Kim, Jihyun
Published in Physical chemistry chemical physics : PCCP (2016)

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Tuning the Threshold Voltage of Exfoliated β-Ga 2 O 3 Flake-Based Field-Effect Transistors by Photo-Enhanced H 3 PO 4 Wet Etching

by Son, Jongha, Kwon, Yongbeom, Kim, Janghyuk, Kim, Jihyun
Published in ECS journal of solid state science and technology (2018)

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A titanium carbide-derived novel tetrafluoromethane adsorbent with outstanding adsorption performance

by Choi, Seung Wan, Lee, Da-Hee, Kim, Janghyuk, Kim, Jihyun, Park, Jong-Ho, Beum, Hee Tae, Lim, Dae-Soon, Lee, Ki Bong
Published in Chemical engineering journal (Lausanne, Switzerland : 1996) (01.03.2017)

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Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor

by Kim, Janghyuk, Mastro, Michael A, Tadjer, Marko J, Kim, Jihyun
Published in ACS applied materials & interfaces (28.06.2017)

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