Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2-Based High-k Dielectrics
Jong-Min Lee, Dong-Sik Park, Seung-chul Yew, Soo-Ho Shin, Jun-Yong Noh, Hyoung-Sub Kim, Byoung-Deog Choi
Published in IEEE electron device letters (01.11.2017)
Published in IEEE electron device letters (01.11.2017)
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2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory
Seo, Min-Woong, Chu, Myunglae, Jung, Hyun-Yong, Kim, Suksan, Song, Jiyoun, Bae, Daehee, Lee, Sanggwon, Lee, Junan, Kim, Sung-Yong, Lee, Jongyeon, Kim, Minkyung, Lee, Gwi-Deok, Shim, Heesung, Um, Changyong, Kim, Changhwa, Baek, In-Gyu, Kwon, Doowon, Kim, Hongki, Choi, Hyuksoon, Go, Jonghyun, Ahn, Jungchak, Lee, Jae-Kyu, Moon, Chang-Rok, Lee, Kyupil, Kim, Hyoung-Sub
Published in IEEE journal of solid-state circuits (01.04.2022)
Published in IEEE journal of solid-state circuits (01.04.2022)
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Risk factor analysis of postoperative kyphotic change in subaxial cervical alignment after upper cervical fixation
Kim, Hyoung-Sub, Lee, Jong Beom, Park, Jong Hyeok, Lee, Ho Jin, Lee, Jung Jae, Dutta, Shumayou, Kim, Il Sup, Hong, Jae Taek
Published in Journal of neurosurgery. Spine (01.08.2019)
Published in Journal of neurosurgery. Spine (01.08.2019)
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Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides
Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs
Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Ok, I., Krishnan, S.A., Lee, J.C.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production
Lee, Jong-Min, Choi, Pyung-Ho, Kim, Soon-Kon, Oh, Jung-Hwan, Shin, Soo-Ho, Noh, Jun-Yong, Kim, Hyoung-Sub, Choi, Byoung-Deog
Published in IEEE transactions on electron devices (01.11.2018)
Published in IEEE transactions on electron devices (01.11.2018)
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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer
OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav
Published in IEEE electron device letters (01.03.2006)
Published in IEEE electron device letters (01.03.2006)
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Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma
Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi
Published in IEEE electron device letters (01.10.1997)
Published in IEEE electron device letters (01.10.1997)
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MANUFACTURING METHOD OF INTEGRATED CIRCUIT DEVICE
KIM HOI JOON, KIM KI HYUN, LEE KONG SOO, LEE HEE SOO, KIM HYOUNG SUB, MOON PYUNG, YEOM GEUN YOUNG
Year of Publication 05.01.2024
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Year of Publication 05.01.2024
Patent
Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy2O3) into HfO2 n-MOSFETs
LEE, Tackhwi, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, FENG ZHU, KIM, Hyoung-Sub, CHOI, Changhwan, OK, Injo, MANHONG ZHANG, KRISHNAN, Siddarth, THAREJA, Gaurav
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
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